Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 μm vertical cavity surface emitting lasers

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2003, Pages 499-500

  Lott, J A ^a   Ledentsov, N N ^b,c   Kovsh, A R ^b   Ustinov, V M ^b   Bimberg, D ^c  

^a AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICAL RESOLVING POWER; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

DISTRIBUTED BRAGG REFLECTORS; MULTIPLE STACKS; SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM ARSENIDE; SOLID SOURCE MOLECULAR BEAM EPITAXY; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 0345328742     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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5. J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, et al., Electronics Letters, 36, 1384 (2000).