1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

Semiconductor Science and Technology

Volumn 15, Issue 6, 2000, Pages 604-607

  Ledentsov, N N ^a   Maximov, M V ^a,b,c   Bimberg, D ^a   Maka, T ^c   Sotomayor Torres, C M ^c   Kochnev, I V ^b   Krestnikov, I L ^b   Lantratov, V M ^b   Cherkashin, N A ^b   Musikhin, Yu M ^b   Alferov, Zh I ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITY OF WUPPERTAL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); GAIN MEASUREMENT; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; STACKING FAULTS; STRUCTURE (COMPOSITION);

POST DEPOSITION TREATMENT; STRUCTURAL PROPERTIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033706088     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/6/320     Document Type: Article

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