-
1
-
-
0000864120
-
To question about conductivity of cuprous oxide
-
Zhuze, V. P. and Kurchatov, I. V., To question about conductivity of cuprous oxide. - Zh. Exsp. Teor. Fiz. (J.E.T.P.) 2, 309 (1932); Zhuze, V. P. and Kurchatov, I. V., Zur electrischen Leitfähigkeit von Kupferoxydul. - Phyz. Zs. SU 1932, 2, N6, 463. [Phys. Zs. - Physikalische Zeitschrift (Leipzig).
-
(1932)
Zh. Exsp. Teor. Fiz. (J.E.T.P.)
, vol.2
, pp. 309
-
-
Zhuze, V.P.1
Kurchatov, I.V.2
-
2
-
-
0000473388
-
Zur electrischen Leitfähigkeit von Kupferoxydul
-
Phys. Zs. - Physikalische Zeitschrift (Leipzig)
-
Zhuze, V. P. and Kurchatov, I. V., To question about conductivity of cuprous oxide. - Zh. Exsp. Teor. Fiz. (J.E.T.P.) 2, 309 (1932); Zhuze, V. P. and Kurchatov, I. V., Zur electrischen Leitfähigkeit von Kupferoxydul. - Phyz. Zs. SU 1932, 2, N6, 463. [Phys. Zs. - Physikalische Zeitschrift (Leipzig).
-
(1932)
Phyz. Zs. SU
, vol.2
, Issue.N6
, pp. 463
-
-
Zhuze, V.P.1
Kurchatov, I.V.2
-
3
-
-
0002893554
-
On the electrical and photoelectric properties of contacts between a metal and semiconductor
-
Frenkel, Ya. I. and Ioffe, A., On the electrical and photoelectric properties of contacts between a metal and semiconductor. - Phys. Z. d. SU 1932, Bd. 1, H. 1, S. 60.
-
(1932)
Phys. Z. D. SU
, vol.1
, Issue.1
, pp. 60
-
-
Frenkel, Ya.I.1
Ioffe, A.2
-
4
-
-
36149008463
-
On the transformation of light into heat in solids
-
Frenkel, Ya. I., On the transformation of light into heat in solids. - Phys. Rev., 37, 17 (1931) and 37, 1276; Frenkel, Ya. I., Light absorption and electrons and holes sticking in dielectric crystals. - Zh. Eksp. Teor. Fiz. 6, 647 (1936).
-
(1931)
Phys. Rev.
, vol.37
, pp. 17
-
-
Frenkel, Ya.I.1
-
5
-
-
11644304313
-
Light absorption and electrons and holes sticking in dielectric crystals
-
Frenkel, Ya. I., On the transformation of light into heat in solids. - Phys. Rev., 37, 17 (1931) and 37, 1276; Frenkel, Ya. I., Light absorption and electrons and holes sticking in dielectric crystals. - Zh. Eksp. Teor. Fiz. 6, 647 (1936).
-
(1936)
Zh. Eksp. Teor. Fiz.
, vol.6
, pp. 647
-
-
Frenkel, Ya.I.1
-
6
-
-
0000234665
-
Light absorption by cuprous oxide crystal in infrared and visible spectrum
-
Gross, E. F. and Karryev, N. A., Light absorption by cuprous oxide crystal in infrared and visible spectrum. - DAN SSSR (Doklady Academii Nauk) 84, 261 (1952); Gross, E. F. and Karryev, N. A., Exciton optical spectrum. - DAN SSR 84, 471 (1952).
-
(1952)
DAN SSSR (Doklady Academii Nauk)
, vol.84
, pp. 261
-
-
Gross, E.F.1
Karryev, N.A.2
-
7
-
-
0000079597
-
Exciton optical spectrum
-
Gross, E. F. and Karryev, N. A., Light absorption by cuprous oxide crystal in infrared and visible spectrum. - DAN SSSR (Doklady Academii Nauk) 84, 261 (1952); Gross, E. F. and Karryev, N. A., Exciton optical spectrum. - DAN SSR 84, 471 (1952).
-
(1952)
DAN SSR
, vol.84
, pp. 471
-
-
Gross, E.F.1
Karryev, N.A.2
-
8
-
-
0000692737
-
Contact resistance of semiconductors
-
Davydov, B. I., Contact resistance of semiconductors. - Zh. Exsp. Teor. Fiz. 9, 451 (1939).
-
(1939)
Zh. Exsp. Teor. Fiz.
, vol.9
, pp. 451
-
-
Davydov, B.I.1
-
11
-
-
0003704899
-
-
Thesis, Leningrad State University - Physico-Technical Inst.
-
Goryunova, N. A., Seroe olovo (Gray tin) Thesis, Leningrad State University - Physico-Technical Inst., (1951); Blum, A. I., Mokrovsky, N. P. and Regel, A. R., The study of the conductivity of the semiconductors and intermetallic compounds in solid and liquid state. - Proc. of the VII Conference on semiconductor properties. Kiev (1950). Izv. AN USSR, Ser. Fiz. XVI, 139 (1952).
-
(1951)
Seroe Olovo (Gray Tin)
-
-
Goryunova, N.A.1
-
12
-
-
5344271520
-
The study of the conductivity of the semiconductors and intermetallic compounds in solid and liquid state
-
Goryunova, N. A., Seroe olovo (Gray tin) Thesis, Leningrad State University - Physico-Technical Inst., (1951); Blum, A. I., Mokrovsky, N. P. and Regel, A. R., The study of the conductivity of the semiconductors and intermetallic compounds in solid and liquid state. - Proc. of the VII Conference on semiconductor properties. Kiev (1950). Izv. AN USSR, Ser. Fiz. XVI, 139 (1952).
-
Proc. of the VII Conference on Semiconductor Properties
-
-
Blum, A.I.1
Mokrovsky, N.P.2
Regel, A.R.3
-
13
-
-
0343011044
-
-
Goryunova, N. A., Seroe olovo (Gray tin) Thesis, Leningrad State University - Physico-Technical Inst., (1951); Blum, A. I., Mokrovsky, N. P. and Regel, A. R., The study of the conductivity of the semiconductors and intermetallic compounds in solid and liquid state. - Proc. of the VII Conference on semiconductor properties. Kiev (1950). Izv. AN USSR, Ser. Fiz. XVI, 139 (1952).
-
(1950)
Izv. AN USSR, Ser. Fiz.
, vol.16
, pp. 139
-
-
-
15
-
-
0000190911
-
Theory of the contact between two semiconductors with different types of conduction
-
Gubanov, A. I., Theory of the contact between two semiconductors with different types of conduction. - Zh. Tekh. Fiz. 20, 1287 (1950); Gubanov, A. I., Theory of the contact of two semiconductors of the same type of conductivity. - Zh. Tekh. Fiz. 21, 304 (1951).
-
(1950)
Zh. Tekh. Fiz.
, vol.20
, pp. 1287
-
-
Gubanov, A.I.1
-
16
-
-
0000407531
-
Theory of the contact of two semiconductors of the same type of conductivity
-
Gubanov, A. I., Theory of the contact between two semiconductors with different types of conduction. - Zh. Tekh. Fiz. 20, 1287 (1950); Gubanov, A. I., Theory of the contact of two semiconductors of the same type of conductivity. - Zh. Tekh. Fiz. 21, 304 (1951).
-
(1951)
Zh. Tekh. Fiz.
, vol.21
, pp. 304
-
-
-
17
-
-
84938006654
-
Theory of a wide-gap emitter for transistors
-
Kroemer, H., Theory of a wide-gap emitter for transistors. - Proc. JRE 45, 1535 (1957); Kroemer, H., Quasi-electric and quasi-magnetic fields in a non-uniform semiconductor. - RCA Rev. 28, 332 (1957).
-
(1957)
Proc. JRE
, vol.45
, pp. 1535
-
-
Kroemer, H.1
-
18
-
-
84938006654
-
Quasi-electric and quasi-magnetic fields in a non-uniform semiconductor
-
Kroemer, H., Theory of a wide-gap emitter for transistors. - Proc. JRE 45, 1535 (1957); Kroemer, H., Quasi-electric and quasi-magnetic fields in a non-uniform semiconductor. - RCA Rev. 28, 332 (1957).
-
(1957)
RCA Rev.
, vol.28
, pp. 332
-
-
Kroemer, H.1
-
20
-
-
84892276380
-
A proposed class of heterojunction injection lasers
-
Submitted October 14, 1963
-
Kroemer, H., A proposed class of heterojunction injection lasers. - Proc. IEEE 51, 1782 (1963) (Submitted October 14, 1963).
-
(1963)
Proc. IEEE
, vol.51
, pp. 1782
-
-
Kroemer, H.1
-
21
-
-
0001234492
-
A characteristic feature of the injection into heterojunctions
-
Submitted April 20, 1966
-
Alferov, Zh. I., Khalfin, V. B. and Kazarinov, R. F., A characteristic feature of the injection into heterojunctions. - Fiz. Tv. Tela 8, 3102 (1966) (Submitted April 20, 1966) (Sov. Phys. - Solid State 8, 10, 2480 (1967)).
-
(1966)
Fiz. Tv. Tela
, vol.8
, pp. 3102
-
-
Alferov, Zh.I.1
Khalfin, V.B.2
Kazarinov, R.F.3
-
22
-
-
5344237062
-
-
Alferov, Zh. I., Khalfin, V. B. and Kazarinov, R. F., A characteristic feature of the injection into heterojunctions. - Fiz. Tv. Tela 8, 3102 (1966) (Submitted April 20, 1966) (Sov. Phys. - Solid State 8, 10, 2480 (1967)).
-
(1967)
Sov. Phys. - Solid State
, vol.8
, pp. 10
-
-
-
23
-
-
0001019819
-
+) structure with heterojunctions
-
Submitted November 11, 1966
-
+) structure with heterojunctions. - Fiz. Tekn. Polupr. 1, 436 (1967). (Submitted November 11, 1966) (Sov. Phys. - Semiconductors 1, 358 (1967)).
-
(1967)
Fiz. Tekn. Polupr.
, vol.1
, pp. 436
-
-
Alferov, Zh.I.1
-
24
-
-
0012079336
-
-
+) structure with heterojunctions. - Fiz. Tekn. Polupr. 1, 436 (1967). (Submitted November 11, 1966) (Sov. Phys. - Semiconductors 1, 358 (1967)).
-
(1967)
Sov. Phys. - Semiconductors
, vol.1
, pp. 358
-
-
-
25
-
-
0001242106
-
Germanium-gallium arsenide heterojunctions
-
Anderson, L., Germanium-gallium arsenide heterojunctions. - IBM J. Res. Develop. 4, 283 (1960); Anderson, L., Experiments on Ge-GaAs heterojunctions. - Solid State Electron 5, 341 (1962).
-
(1960)
IBM J. Res. Develop.
, vol.4
, pp. 283
-
-
Anderson, L.1
-
26
-
-
0040990218
-
Experiments on Ge-GaAs heterojunctions
-
Anderson, L., Germanium-gallium arsenide heterojunctions. - IBM J. Res. Develop. 4, 283 (1960); Anderson, L., Experiments on Ge-GaAs heterojunctions. - Solid State Electron 5, 341 (1962).
-
(1962)
Solid State Electron
, vol.5
, pp. 341
-
-
Anderson, L.1
-
27
-
-
0000497185
-
-
Natta, G., Passerini, L., Gazz. Chim. Ital. 58, 458 (1928); Goldschmidt, V. M., Crystal structure and chemical constitution. - Trans. Farad. Soc. 25, 253 (1929).
-
(1928)
Gazz. Chim. Ital.
, vol.58
, pp. 458
-
-
Natta, G.1
Passerini, L.2
-
28
-
-
0001076864
-
Crystal structure and chemical constitution
-
Natta, G., Passerini, L., Gazz. Chim. Ital. 58, 458 (1928); Goldschmidt, V. M., Crystal structure and chemical constitution. - Trans. Farad. Soc. 25, 253 (1929).
-
(1929)
Trans. Farad. Soc.
, vol.25
, pp. 253
-
-
Goldschmidt, V.M.1
-
29
-
-
0342730711
-
Injection luminescence of epitaxial heterojunctions in GaP-GaAs system
-
Submitted July 15, 1966
-
Alferov, Zh. I. et al., Injection luminescence of epitaxial heterojunctions in GaP-GaAs system. - Fiz. Tv. Tela 9, 279 (1967) (Submitted July 15, 1966) (Sov. Phys. - Solid State 9, 208 (1967)).
-
(1967)
Fiz. Tv. Tela
, vol.9
, pp. 279
-
-
Alferov, Zh.I.1
-
30
-
-
0000932059
-
-
Alferov, Zh. I. et al., Injection luminescence of epitaxial heterojunctions in GaP-GaAs system. - Fiz. Tv. Tela 9, 279 (1967) (Submitted July 15, 1966) (Sov. Phys. - Solid State 9, 208 (1967)).
-
(1967)
Sov. Phys. - Solid State
, vol.9
, pp. 208
-
-
-
32
-
-
0015099998
-
-
xAs p-n junctions grown by liquid-phase epitaxy. - Appl. Phys. Lett. 11, 81 (1967) (Submitted June 19, 1967).
-
(1971)
Sov. Phys. - Semicond.
, vol.5
, pp. 174
-
-
-
33
-
-
0001081864
-
1-xAs crystalls
-
Submitted May 18, 1967
-
xAs p-n junctions grown by liquid-phase epitaxy. - Appl. Phys. Lett. 11, 81 (1967) (Submitted June 19, 1967).
-
(1967)
Fiz. Tekn. Polupr.
, vol.1
, pp. 1579
-
-
Alferov, Zh.I.1
Andreev, V.M.2
Korol'kov, V.I.3
Tret'yakov, D.N.4
Tuchkevich, V.M.5
-
34
-
-
33646411298
-
-
xAs p-n junctions grown by liquid-phase epitaxy. - Appl. Phys. Lett. 11, 81 (1967) (Submitted June 19, 1967).
-
(1968)
Sov. Phys. - Semicond.
, vol.1
, pp. 1313
-
-
-
36
-
-
0001260596
-
1-xAs-pGaAs heterojunctions
-
Submitted September 13, 1967
-
1-xAs-pGaAs heterojunctions. - Fiz. Tekn. Polupr. 2, 1016 (1968) (Submitted September 13, 1967) (Sov. Phys. - Semicond. 2, 843 (1969)).
-
(1968)
Fiz. Tekn. Polupr.
, vol.2
, pp. 1016
-
-
Alferov, Zh.I.1
Andreev, V.M.2
Korol'kov, V.I.3
Portnoy, E.L.4
Tret'yakov, D.N.5
-
37
-
-
3843061320
-
-
1-xAs-pGaAs heterojunctions. - Fiz. Tekn. Polupr. 2, 1016 (1968) (Submitted September 13, 1967) (Sov. Phys. - Semicond. 2, 843 (1969)).
-
(1969)
Sov. Phys. - Semicond.
, vol.2
, pp. 843
-
-
-
38
-
-
0000496324
-
Coherent radiation of epitaxial heterojunction structures in the AlAs-GaAs system
-
Submitted May 5, 1968
-
Zh. I. Alferov, Andreev, V. M., Korol'kov, V. I., Portnoy, E. L. and Tret'yakov, D. N., Coherent radiation of epitaxial heterojunction structures in the AlAs-GaAs system. - Fiz. Tekn. Polupr. 2, 1545 (1968) (Submitted May 5, 1968) (Sov. Phys. - Semicond. 2, 1289 (1969)).
-
(1968)
Fiz. Tekn. Polupr.
, vol.2
, pp. 1545
-
-
Alferov, Zh.I.1
Andreev, V.M.2
Korol'kov, V.I.3
Portnoy, E.L.4
Tret'yakov, D.N.5
-
39
-
-
10844295488
-
-
Zh. I. Alferov, Andreev, V. M., Korol'kov, V. I., Portnoy, E. L. and Tret'yakov, D. N., Coherent radiation of epitaxial heterojunction structures in the AlAs-GaAs system. - Fiz. Tekn. Polupr. 2, 1545 (1968) (Submitted May 5, 1968) (Sov. Phys. - Semicond. 2, 1289 (1969)).
-
(1969)
Sov. Phys. - Semicond.
, vol.2
, pp. 1289
-
-
-
40
-
-
57149127068
-
Recombination radiation in epitaxial structures in the system AlAs-GaAs
-
(a) Alferov, Zh. I., Andreev, V. M., Korol'kov, V. I., Portnoy, E. L. and Tret'yakov, D. N., Recombination radiation in epitaxial structures in the system AlAs-GaAs. - Proc. IX ICPS Moscow, 23-29 July 1968. Izdatel'stvo "Nauka", Leningrad, v. I, 534 (1969);
-
(1968)
Proc. IX ICPS Moscow, 23-29 July
-
-
Alferov, Zh.I.1
Andreev, V.M.2
Korol'kov, V.I.3
Portnoy, E.L.4
Tret'yakov, D.N.5
-
41
-
-
5344245762
-
-
Leningrad
-
(a) Alferov, Zh. I., Andreev, V. M., Korol'kov, V. I., Portnoy, E. L. and Tret'yakov, D. N., Recombination radiation in epitaxial structures in the system AlAs-GaAs. - Proc. IX ICPS Moscow, 23-29 July 1968. Izdatel'stvo "Nauka", Leningrad, v. I, 534 (1969);
-
(1969)
Nauka
, vol.1
, pp. 534
-
-
Izdatel'stvo1
-
42
-
-
0009544338
-
1-xAs-nGaAs
-
Newark, Delaware USA. August 25-29
-
1-xAs-nGaAs. - Proc. Int. Conf. on Luminescence. Newark, Delaware USA. August 25-29, 1969. Journal of Luminescence 1, 2, 869 (1970);
-
(1969)
Proc. Int. Conf. on Luminescence
-
-
Alferov, Zh.I.1
-
43
-
-
0009544338
-
-
1-xAs-nGaAs. - Proc. Int. Conf. on Luminescence. Newark, Delaware USA. August 25-29, 1969. Journal of Luminescence 1, 2, 869 (1970);
-
(1970)
Journal of Luminescence
, vol.1
, Issue.2
, pp. 869
-
-
-
45
-
-
33646411813
-
-
1-xAs-GaAs and p-n junctions in GaAs. - Fiz. Tekn. Polupr. 3, 1054 (1969) (Sov. Phys. - Semicond. 3, 885 (1970));
-
(1970)
Sov. Phys. - Semicond.
, vol.3
, pp. 885
-
-
-
47
-
-
84884591429
-
-
1-xAs solid solutions with variable forbidden gap. - Fiz. Tekh. Polupr. 3, 541 (1969) (Sov. Phys. - Semicond. 3, 460 (1969)).
-
(1969)
Sov. Phys. - Semicond.
, vol.3
, pp. 460
-
-
-
48
-
-
0000137626
-
AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold
-
Submitted December 30, 1968
-
Alferov, Zh. I., Andreev, V. M., Portnoy, E. L. and Trukan, M. K., AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold. - Fiz. Tekn. Polupr. 3, 1328 (1969) (Submitted December 30, 1968) (Sov. Phys. - Semicond. 3, 1107 (1970)).
-
(1969)
Fiz. Tekn. Polupr.
, vol.3
, pp. 1328
-
-
Alferov, Zh.I.1
Andreev, V.M.2
Portnoy, E.L.3
Trukan, M.K.4
-
49
-
-
0001534148
-
-
Alferov, Zh. I., Andreev, V. M., Portnoy, E. L. and Trukan, M. K., AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold. - Fiz. Tekn. Polupr. 3, 1328 (1969) (Submitted December 30, 1968) (Sov. Phys. - Semicond. 3, 1107 (1970)).
-
(1970)
Sov. Phys. - Semicond.
, vol.3
, pp. 1107
-
-
-
50
-
-
0000137627
-
Spontaneous radiation sources based on structures with AlAs-GaAs heterojunctions
-
Submitted December 26, 1968
-
Alferov, Zh. I., Andreev, V. M., Korol'kov, V. I., Portnoy, E. L. and Yakovenko, A. A., Spontaneous radiation sources based on structures with AlAs-GaAs heterojunctions. - Fiz. Tekn. Polupr. 3, 930 (1969) (Submitted December 26, 1968) (Sov. Phys. Semicond. 3, 785 (1969)).
-
(1969)
Fiz. Tekn. Polupr.
, vol.3
, pp. 930
-
-
Alferov, Zh.I.1
Andreev, V.M.2
Korol'kov, V.I.3
Portnoy, E.L.4
Yakovenko, A.A.5
-
51
-
-
33646434862
-
-
Alferov, Zh. I., Andreev, V. M., Korol'kov, V. I., Portnoy, E. L. and Yakovenko, A. A., Spontaneous radiation sources based on structures with AlAs-GaAs heterojunctions. - Fiz. Tekn. Polupr. 3, 930 (1969) (Submitted December 26, 1968) (Sov. Phys. Semicond. 3, 785 (1969)).
-
(1969)
Sov. Phys. Semicond.
, vol.3
, pp. 785
-
-
-
52
-
-
0000925674
-
1-xAs-nGaAs
-
(Submitted June 10, 1970)
-
1-xAs-nGaAs. - Fiz. Tekn. Polupr. 4, 2378 (1970) (Submitted June 10, 1970) (Sov. Phys. - Semicond. 4, 2047 (1971)).
-
(1970)
Fiz. Tekn. Polupr.
, vol.4
, pp. 2378
-
-
Alferov, Zh.I.1
Andreev, V.M.2
Kagan, M.B.3
Protasov, I.I.4
Trofim, V.G.5
-
53
-
-
0015079919
-
-
1-xAs-nGaAs. - Fiz. Tekn. Polupr. 4, 2378 (1970) (Submitted June 10, 1970) (Sov. Phys. - Semicond. 4, 2047 (1971)).
-
(1971)
Sov. Phys. - Semicond.
, vol.4
, pp. 2047
-
-
-
54
-
-
0000095009
-
Phototransistor on the base of heterojunctions in the AlAs-GaAs system
-
Alferov, Zh. I., Ahmedov, F. A., Korol'kov, V. I. and Nikitin, V. G., Phototransistor on the base of heterojunctions in the AlAs-GaAs system. - Fiz. Tekn. Polupr. 7, 1159 (1973) (Sov. Phys. - Semicond. 7, 780 (1973)).
-
(1973)
Fiz. Tekn. Polupr.
, vol.7
, pp. 1159
-
-
Alferov, Zh.I.1
Ahmedov, F.A.2
Korol'kov, V.I.3
Nikitin, V.G.4
-
55
-
-
0015724793
-
-
Alferov, Zh. I., Ahmedov, F. A., Korol'kov, V. I. and Nikitin, V. G., Phototransistor on the base of heterojunctions in the AlAs-GaAs system. - Fiz. Tekn. Polupr. 7, 1159 (1973) (Sov. Phys. - Semicond. 7, 780 (1973)).
-
(1973)
Sov. Phys. - Semicond.
, vol.7
, pp. 780
-
-
-
57
-
-
0014840607
-
-
1-xAs solid solutions. - Fiz. Tekn. Polupr. 4, 578 (1970) (Sov. Phys. - Semicond. 4, 481 (1970)).
-
(1970)
Sov. Phys. - Semicond.
, vol.4
, pp. 481
-
-
-
59
-
-
0001041015
-
Effect of the heterostructure parameters on the laser threshold current and the realization of continuous generation at room temperature
-
Submitted May 6, 1970
-
Alferov, Zh. I. et al., Effect of the heterostructure parameters on the laser threshold current and the realization of continuous generation at room temperature. - Fiz. Tekn. Polupr. 4, 1826 (1970) (Submitted May 6, 1970) (Sov. Phys. - Semicond. 4, 1573 (1971)).
-
(1970)
Fiz. Tekn. Polupr.
, vol.4
, pp. 1826
-
-
Alferov, Zh.I.1
-
60
-
-
0001041014
-
-
Alferov, Zh. I. et al., Effect of the heterostructure parameters on the laser threshold current and the realization of continuous generation at room temperature. - Fiz. Tekn. Polupr. 4, 1826 (1970) (Submitted May 6, 1970) (Sov. Phys. - Semicond. 4, 1573 (1971)).
-
(1971)
Sov. Phys. - Semicond.
, vol.4
, pp. 1573
-
-
-
61
-
-
0014833735
-
Junction lasers which operate continuously at room temperature
-
Submitted June 8, 1970
-
Hayashi, I., Panish, M. B., Foy, P. W. and Sumski, S., Junction lasers which operate continuously at room temperature. - Appl. Phys. Lett. 17, 109 (1970) (Submitted June 8, 1970).
-
(1970)
Appl. Phys. Lett.
, vol.17
, pp. 109
-
-
Hayashi, I.1
Panish, M.B.2
Foy, P.W.3
Sumski, S.4
-
62
-
-
0002120139
-
V semiconductors and of their solid solutions
-
(Budapest, October 1970) Academiai Kiado
-
V semiconductors and of their solid solutions. - Proc. of the International Conference on the Physics and Chemistry of Semiconductor Heterojunctions and Layer Structures (Budapest, October 1970) Academiai Kiado, 1, 93 (1971).
-
(1971)
Proc. of the International Conference on the Physics and Chemistry of Semiconductor Heterojunctions and Layer Structures
, vol.1
, pp. 93
-
-
Alferov, Zh.I.1
Andreev, V.M.2
Konnikov, S.G.3
Nikitin, V.G.4
Tret'akov, D.N.5
-
63
-
-
84935702367
-
In gallium arsenid and related compounds
-
Antipas, G. A., Moon, R. L., James, L. W., Edgecumbe, J. and Bell, R. L., In gallium arsenid and related compounds. Conf. Ser. IOP, 17, 48 (1973).
-
(1973)
Conf. Ser. IOP
, vol.17
, pp. 48
-
-
Antipas, G.A.1
Moon, R.L.2
James, L.W.3
Edgecumbe, J.4
Bell, R.L.5
-
64
-
-
0001133510
-
Photoemission from cesium-oxide-activated InGaAsp
-
James, L., Antipas, G., Moon, R., Edecumbe, J. and Bell, R. L., Photoemission from cesium-oxide-activated InGaAsp. - Appl. Phys. Lett. 22, 270 (1973).
-
(1973)
Appl. Phys. Lett.
, vol.22
, pp. 270
-
-
James, L.1
Antipas, G.2
Moon, R.3
Edecumbe, J.4
Bell, R.L.5
-
65
-
-
0000626310
-
1-y
-
1-y. - Kvant. Electron. 1, 2294 (1974) (Sov. J. Quantum Electron 1, 1281 (1975)); Hsieh, J. J., Room-temperature operating GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μm. - Appl. Phys. Lett. 28, 283 (1976).
-
(1974)
Kvant. Electron.
, vol.1
, pp. 2294
-
-
Bogatov, A.P.1
-
66
-
-
0008399672
-
-
1-y. - Kvant. Electron. 1, 2294 (1974) (Sov. J. Quantum Electron 1, 1281 (1975)); Hsieh, J. J., Room-temperature operating GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μm. - Appl. Phys. Lett. 28, 283 (1976).
-
(1975)
Sov. J. Quantum Electron
, vol.1
, pp. 1281
-
-
-
67
-
-
36749116126
-
Room-temperature operating GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μm
-
1-y. - Kvant. Electron. 1, 2294 (1974) (Sov. J. Quantum Electron 1, 1281 (1975)); Hsieh, J. J., Room-temperature operating GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μm. - Appl. Phys. Lett. 28, 283 (1976).
-
(1976)
Appl. Phys. Lett.
, vol.28
, pp. 283
-
-
Hsieh, J.J.1
-
68
-
-
0001019690
-
0.5P
-
Submitted January 23, 1975
-
2, λ-5850A, 77°K). - Appl. Phys. Lett., 27, 245 (1975) (Submitted May 23, 1975).
-
(1975)
Pisma Zh. Tech. Fiz.
, vol.1
, pp. 305
-
-
Alferov, Zh.I.1
Arsent'ev, I.N.2
Garbuzov, D.Z.3
Konnikov, S.G.4
Rumyantsev, V.D.5
-
70
-
-
0001355294
-
The red injection heterolasers in the system Ga-In-As-P
-
Submitted February 26, 1975
-
2, λ-5850A, 77°K). - Appl. Phys. Lett., 27, 245 (1975) (Submitted May 23, 1975).
-
(1975)
Pisma Zh. Tech. Fiz.
, vol.1
, pp. 406
-
-
Alferov, Zh.I.1
Arsent'ev, I.N.2
Garbuzov, D.Z.3
Rumyantsev, I.N.4
-
72
-
-
0000256031
-
2, λ-5850A, 77°K)
-
Submitted May 23, 1975
-
2, λ-5850A, 77°K). - Appl. Phys. Lett., 27, 245 (1975) (Submitted May 23, 1975).
-
(1975)
Appl. Phys. Lett.
, vol.27
, pp. 245
-
-
Hitchens, W.R.1
Holonyak, Y.N.2
Wright, P.D.3
Coleman, J.J.4
-
73
-
-
0042618809
-
-
Author Certificate N392875, Application N1677436 with priority from July 19
-
Alferov, Zh. I., Andreev, V. M., Kazarinov, R. F., Portnoy, E. L. and Suris, R. A., Semiconductor optical quantum generator. Author Certificate N392875, Application N1677436 with priority from July 19, 1971.
-
(1971)
Semiconductor Optical Quantum Generator
-
-
Alferov, Zh.I.1
Andreev, V.M.2
Kazarinov, R.F.3
Portnoy, E.L.4
Suris, R.A.5
-
74
-
-
0015008396
-
Stimulated emission in a periodic structure
-
Kogelnik, H. and Shank, C. V., Stimulated emission in a periodic structure. - Appl. Phys. Lett. 18, 152 (1971).
-
(1971)
Appl. Phys. Lett.
, vol.18
, pp. 152
-
-
Kogelnik, H.1
Shank, C.V.2
-
75
-
-
0000707088
-
Injection heterolaser with diffraction grating on contact surface
-
Kazarinov, R. F. and Suris, R. A., Injection heterolaser with diffraction grating on contact surface. - Fiz. Tekh. Polupr. 6, 1359 (1972) (Sov. Phys. - Semicond. 6, 1184 (1973)).
-
(1972)
Fiz. Tekh. Polupr.
, vol.6
, pp. 1359
-
-
Kazarinov, R.F.1
Suris, R.A.2
-
76
-
-
0015564528
-
-
Kazarinov, R. F. and Suris, R. A., Injection heterolaser with diffraction grating on contact surface. - Fiz. Tekh. Polupr. 6, 1359 (1972) (Sov. Phys. - Semicond. 6, 1184 (1973)).
-
(1973)
Sov. Phys. - Semicond.
, vol.6
, pp. 1184
-
-
-
77
-
-
0000352544
-
Laser with supersmall divergens of radiation
-
Alferov, Zh. I. et al., Laser with supersmall divergens of radiation. - Fiz. Tekh. Polupr. 8, 832 (1974) (Sov. Phys. - Semicond. 8, 541 (1974)); Alferov, Zh. I. et al., Semiconductor laser with distributed feedback in second order. - Pisma Zh. Tech. Fiz. 1, 645 (1975) (Tech. Phys. Lett. 1, 286 (1975)).
-
(1974)
Fiz. Tekh. Polupr.
, vol.8
, pp. 832
-
-
Alferov, Zh.I.1
-
78
-
-
0016117239
-
-
Alferov, Zh. I. et al., Laser with supersmall divergens of radiation. - Fiz. Tekh. Polupr. 8, 832 (1974) (Sov. Phys. - Semicond. 8, 541 (1974)); Alferov, Zh. I. et al., Semiconductor laser with distributed feedback in second order. - Pisma Zh. Tech. Fiz. 1, 645 (1975) (Tech. Phys. Lett. 1, 286 (1975)).
-
(1974)
Sov. Phys. - Semicond.
, vol.8
, pp. 541
-
-
-
79
-
-
0000071919
-
Semiconductor laser with distributed feedback in second order
-
Alferov, Zh. I. et al., Laser with supersmall divergens of radiation. - Fiz. Tekh. Polupr. 8, 832 (1974) (Sov. Phys. - Semicond. 8, 541 (1974)); Alferov, Zh. I. et al., Semiconductor laser with distributed feedback in second order. - Pisma Zh. Tech. Fiz. 1, 645 (1975) (Tech. Phys. Lett. 1, 286 (1975)).
-
(1975)
Pisma Zh. Tech. Fiz.
, vol.1
, pp. 645
-
-
-
80
-
-
0009717993
-
-
Alferov, Zh. I. et al., Laser with supersmall divergens of radiation. - Fiz. Tekh. Polupr. 8, 832 (1974) (Sov. Phys. - Semicond. 8, 541 (1974)); Alferov, Zh. I. et al., Semiconductor laser with distributed feedback in second order. - Pisma Zh. Tech. Fiz. 1, 645 (1975) (Tech. Phys. Lett. 1, 286 (1975)).
-
(1975)
Tech. Phys. Lett.
, vol.1
, pp. 286
-
-
-
81
-
-
36849097313
-
Optically pumped GaAs surface laser with corrugation feedback
-
Nakamura, M., Yariv, A., Yen, H. W., Somekh, S. and Garvin, H. L., Optically pumped GaAs surface laser with corrugation feedback. - Appl. Phys. Lett. 22, 315 (1973).
-
(1973)
Appl. Phys. Lett.
, vol.22
, pp. 315
-
-
Nakamura, M.1
Yariv, A.2
Yen, H.W.3
Somekh, S.4
Garvin, H.L.5
-
82
-
-
0001513394
-
Distributed-feedback single heterojunction GaAs diode laser
-
Scifres, D. R., Burnham, R. D. and Streifer, W., Distributed-feedback single heterojunction GaAs diode laser. - Appl. Phys. Lett. 25, 203 (1974).
-
(1974)
Appl. Phys. Lett.
, vol.25
, pp. 203
-
-
Scifres, D.R.1
Burnham, R.D.2
Streifer, W.3
-
83
-
-
0020588134
-
Steggered-lineup heterojunctions as sources of tunable bellow-gap radiation: Operating principle and semiconductor selection
-
Kroemer, H. and Griffiths, G., Steggered-lineup heterojunctions as sources of tunable bellow-gap radiation: Operating principle and semiconductor selection. - IEEE Electron Device Lett. EDL-4, 1, 20 (1983).
-
(1983)
IEEE Electron Device Lett. EDL-4
, vol.1
, pp. 20
-
-
Kroemer, H.1
Griffiths, G.2
-
84
-
-
0000291554
-
Generation of the coherent radiation in quantum-sized structure of the single heterojunction
-
Baranov, A. N. et al., Generation of the coherent radiation in quantum-sized structure of the single heterojunction. - Fiz. Tekh. Polupr. 20, 2217 (1986)
-
(1986)
Fiz. Tekh. Polupr.
, vol.20
, pp. 2217
-
-
Baranov, A.N.1
-
86
-
-
0002791888
-
Film Deposition by molecular beam techniques
-
Cho, A. Y., Film Deposition by molecular beam techniques. J. Vac. Sci. Technol. 8, 31 (1971); Cho, A. Y., Growth of periodic structures by the molecular-beam method. - Appl. Phys. Lett. 19, 467 (1971).
-
(1971)
J. Vac. Sci. Technol.
, vol.8
, pp. 31
-
-
Cho, A.Y.1
-
87
-
-
0001106262
-
Growth of periodic structures by the molecular-beam method
-
Cho, A. Y., Film Deposition by molecular beam techniques. J. Vac. Sci. Technol. 8, 31 (1971); Cho, A. Y., Growth of periodic structures by the molecular-beam method. - Appl. Phys. Lett. 19, 467 (1971).
-
(1971)
Appl. Phys. Lett.
, vol.19
, pp. 467
-
-
Cho, A.Y.1
-
88
-
-
0000606620
-
Single crystal GaAs on insolating substrates
-
Manasevit, H. M. Single crystal GaAs on insolating substrates. - Appl. Phys. Lett. 12, 156 (1968).
-
(1968)
Appl. Phys. Lett.
, vol.12
, pp. 156
-
-
Manasevit, H.M.1
-
89
-
-
0001420894
-
xAs/GaAs double-heterostructure lasers grown by metalloorganic chemical vapor deposition
-
xAs/GaAs double-heterostructure lasers grown by metalloorganic chemical vapor deposition. - Appl. Phys. Lett. 31, 466 (1977).
-
(1977)
Appl. Phys. Lett.
, vol.31
, pp. 466
-
-
Dupuis, R.D.1
Dapkus, P.D.2
-
91
-
-
0014707790
-
Superlattice and negative differential conductivity
-
Esaki, L. and Tsu, R., Superlattice and negative differential conductivity. - IBM J. Res. Dev. 14, 61 (1970).
-
(1970)
IBM J. Res. Dev.
, vol.14
, pp. 61
-
-
Esaki, L.1
Tsu, R.2
-
92
-
-
0000952593
-
Effect of ultrasonics on the electron spectrum of crystals
-
Keldysh, L. V., Effect of ultrasonics on the electron spectrum of crystals. - Fiz. Tv. Tela 4, 2265 (1962) (Sov. Phys. - Sol. State 4, 1658 (1963)).
-
(1962)
Fiz. Tv. Tela
, vol.4
, pp. 2265
-
-
Keldysh, L.V.1
-
93
-
-
0000923877
-
-
Keldysh, L. V., Effect of ultrasonics on the electron spectrum of crystals. - Fiz. Tv. Tela 4, 2265 (1962) (Sov. Phys. - Sol. State 4, 1658 (1963)).
-
(1963)
Sov. Phys. - Sol. State
, vol.4
, pp. 1658
-
-
-
94
-
-
0015141562
-
Possibility of amplification of electromagnetic waves in a semiconductor superlattice
-
R. F. Kazarinov and Suris, R. A., Possibility of amplification of electromagnetic waves in a semiconductor superlattice. - Fiz. Tekh. Polupr. 5, 707 (1971) (Sov. Phys. - Semicond. 5, 707 (1971)); Kazarinov, R. F. and Suris, R. A., Electric and electromagnetic properties of a superlattice. - Fiz. Tekh. Polupr. 6, 120 (1972) (Sov. Phys. - Semicond. 6, 120 (1972)); Kazarinov, R. F. and Suris, R. A., Theory of electrical properties of semiconductors with superlattices. - Fiz. Tekh. Polupr. 7, 347 (1973) (Sov. Phys. - Semicond. 7, 347 (1973)).
-
(1971)
Fiz. Tekh. Polupr.
, vol.5
, pp. 707
-
-
Kazarinov, R.F.1
Suris, R.A.2
-
95
-
-
0015141562
-
-
R. F. Kazarinov and Suris, R. A., Possibility of amplification of electromagnetic waves in a semiconductor superlattice. - Fiz. Tekh. Polupr. 5, 707 (1971) (Sov. Phys. - Semicond. 5, 707 (1971)); Kazarinov, R. F. and Suris, R. A., Electric and electromagnetic properties of a superlattice. - Fiz. Tekh. Polupr. 6, 120 (1972) (Sov. Phys. - Semicond. 6, 120 (1972)); Kazarinov, R. F. and Suris, R. A., Theory of electrical properties of semiconductors with superlattices. - Fiz. Tekh. Polupr. 7, 347 (1973) (Sov. Phys. - Semicond. 7, 347 (1973)).
-
(1971)
Sov. Phys. - Semicond.
, vol.5
, pp. 707
-
-
-
96
-
-
0015141562
-
Electric and electromagnetic properties of a superlattice
-
R. F. Kazarinov and Suris, R. A., Possibility of amplification of electromagnetic waves in a semiconductor superlattice. - Fiz. Tekh. Polupr. 5, 707 (1971) (Sov. Phys. - Semicond. 5, 707 (1971)); Kazarinov, R. F. and Suris, R. A., Electric and electromagnetic properties of a superlattice. - Fiz. Tekh. Polupr. 6, 120 (1972) (Sov. Phys. - Semicond. 6, 120 (1972)); Kazarinov, R. F. and Suris, R. A., Theory of electrical properties of semiconductors with superlattices. - Fiz. Tekh. Polupr. 7, 347 (1973) (Sov. Phys. - Semicond. 7, 347 (1973)).
-
(1972)
Fiz. Tekh. Polupr.
, vol.6
, pp. 120
-
-
Kazarinov, R.F.1
Suris, R.A.2
-
97
-
-
0015141562
-
-
R. F. Kazarinov and Suris, R. A., Possibility of amplification of electromagnetic waves in a semiconductor superlattice. - Fiz. Tekh. Polupr. 5, 707 (1971) (Sov. Phys. - Semicond. 5, 707 (1971)); Kazarinov, R. F. and Suris, R. A., Electric and electromagnetic properties of a superlattice. - Fiz. Tekh. Polupr. 6, 120 (1972) (Sov. Phys. - Semicond. 6, 120 (1972)); Kazarinov, R. F. and Suris, R. A., Theory of electrical properties of semiconductors with superlattices. - Fiz. Tekh. Polupr. 7, 347 (1973) (Sov. Phys. - Semicond. 7, 347 (1973)).
-
(1972)
Sov. Phys. - Semicond.
, vol.6
, pp. 120
-
-
-
98
-
-
0015659265
-
Theory of electrical properties of semiconductors with superlattices
-
R. F. Kazarinov and Suris, R. A., Possibility of amplification of electromagnetic waves in a semiconductor superlattice. - Fiz. Tekh. Polupr. 5, 707 (1971) (Sov. Phys. - Semicond. 5, 707 (1971)); Kazarinov, R. F. and Suris, R. A., Electric and electromagnetic properties of a superlattice. - Fiz. Tekh. Polupr. 6, 120 (1972) (Sov. Phys. - Semicond. 6, 120 (1972)); Kazarinov, R. F. and Suris, R. A., Theory of electrical properties of semiconductors with superlattices. - Fiz. Tekh. Polupr. 7, 347 (1973) (Sov. Phys. - Semicond. 7, 347 (1973)).
-
(1973)
Fiz. Tekh. Polupr.
, vol.7
, pp. 347
-
-
Kazarinov, R.F.1
Suris, R.A.2
-
99
-
-
0015659265
-
-
R. F. Kazarinov and Suris, R. A., Possibility of amplification of electromagnetic waves in a semiconductor superlattice. - Fiz. Tekh. Polupr. 5, 707 (1971) (Sov. Phys. - Semicond. 5, 707 (1971)); Kazarinov, R. F. and Suris, R. A., Electric and electromagnetic properties of a superlattice. - Fiz. Tekh. Polupr. 6, 120 (1972) (Sov. Phys. - Semicond. 6, 120 (1972)); Kazarinov, R. F. and Suris, R. A., Theory of electrical properties of semiconductors with superlattices. - Fiz. Tekh. Polupr. 7, 347 (1973) (Sov. Phys. - Semicond. 7, 347 (1973)).
-
(1973)
Sov. Phys. - Semicond.
, vol.7
, pp. 347
-
-
-
100
-
-
6244304433
-
Tunneling in finite superlattice
-
Tsu, R. and Esaki, L., Tunneling in finite superlattice. - Appl. Phys. Lett. 22, 562 (1973).
-
(1973)
Appl. Phys. Lett.
, vol.22
, pp. 562
-
-
Tsu, R.1
Esaki, L.2
-
101
-
-
0020101853
-
Strained-layer superlattices from lattice mismatched materials
-
Osbourn, G., Strained-layer superlattices from lattice mismatched materials. - J. Appl. Phys. 53, 1586 (1982).
-
(1982)
J. Appl. Phys.
, vol.53
, pp. 1586
-
-
Osbourn, G.1
-
102
-
-
0001397567
-
Continuous 300 K laser operation of strained superlattices
-
Ludowise, M. et al., Continuous 300 K laser operation of strained superlattices. - Appl. Phys. Lett. 42, 487 (1983).
-
(1983)
Appl. Phys. Lett.
, vol.42
, pp. 487
-
-
Ludowise, M.1
-
103
-
-
0001802779
-
Growth of GaAs-GaAlAs superlattices
-
Chang, L. L., Esaki, L., Howard, W. E. and Ludke, R., Growth of GaAs-GaAlAs superlattices. - J. Vac. Soc. Technol. 10, 11 (1973).
-
(1973)
J. Vac. Soc. Technol.
, vol.10
, pp. 11
-
-
Chang, L.L.1
Esaki, L.2
Howard, W.E.3
Ludke, R.4
-
104
-
-
0016072199
-
Resonant tunneling in semiconductor double barriers
-
Chang, L. L., Esaki, L. and Tsu. R., Resonant tunneling in semiconductor double barriers. - Appl. Phys. Lett. 24, 593 (1974).
-
(1974)
Appl. Phys. Lett.
, vol.24
, pp. 593
-
-
Chang, L.L.1
Esaki, L.2
Tsu, R.3
-
105
-
-
0000076421
-
New Transport phenomenon in a semiconductor "Superlattice"
-
Esaki, L. and Chang, L. L., New Transport phenomenon in a semiconductor "Superlattice". - Phys. Rev. Lett. 33, 686 (1974).
-
(1974)
Phys. Rev. Lett.
, vol.33
, pp. 686
-
-
Esaki, L.1
Chang, L.L.2
-
106
-
-
19444377871
-
-
(Edited by R. H. Kingston), University of Pennsylvania Press, Philadelphia
-
Shriffer, J. R., Semiconductor surface physics (Edited by R. H. Kingston), p. 68, University of Pennsylvania Press, Philadelphia.
-
Semiconductor Surface Physics
, pp. 68
-
-
Shriffer, J.R.1
-
107
-
-
0000142320
-
Magneto-oscillatory conductance in silicon surfaces
-
Fowler, A. B., Fang, F. F., Howard, W. E. and Stilee, P. J., Magneto-oscillatory conductance in silicon surfaces. - Phys. Rev. Lett. 16, 901 (1966).
-
(1966)
Phys. Rev. Lett.
, vol.16
, pp. 901
-
-
Fowler, A.B.1
Fang, F.F.2
Howard, W.E.3
Stilee, P.J.4
-
108
-
-
0014731307
-
Quantum-size effect - Present state and perspective on experimental investigations
-
Lutskii, V. N., Quantum-size effect - present state and perspective on experimental investigations. - Phys. Stat. Sol. (a) 1 199 (1970).
-
(1970)
Phys. Stat. Sol. (a)
, vol.1
, pp. 199
-
-
Lutskii, V.N.1
-
109
-
-
36749106768
-
Electron mobilities in modulation-doped semiconductor heterojunction superlattices
-
Dingle, R., Stormer, H. L., Gossard, H. L. and Wiegmann, W., Electron mobilities in modulation-doped semiconductor heterojunction superlattices. - Appl. Phys. Lett. 33, 665 (1978).
-
(1978)
Appl. Phys. Lett.
, vol.33
, pp. 665
-
-
Dingle, R.1
Stormer, H.L.2
Gossard, H.L.3
Wiegmann, W.4
-
110
-
-
0019047098
-
Two-dimensional electron gas M.E.S.F.E.T. structure
-
Delagebeaudeuf, D. et al., Two-dimensional electron gas M.E.S.F.E.T. structure. - Electron Lett. 16, 667 (1980).
-
(1980)
Electron Lett.
, vol.16
, pp. 667
-
-
Delagebeaudeuf, D.1
-
114
-
-
0001362308
-
Extremely low threshold (AlGa)As graded-index wave-guide separate-confinement heterostructure lasers grown by molecular-beam epitaxy
-
Tsang, W. T., Extremely low threshold (AlGa)As graded-index wave-guide separate-confinement heterostructure lasers grown by molecular-beam epitaxy. - Appl. Phys. Lett. 40, 217 (1982).
-
(1982)
Appl. Phys. Lett.
, vol.40
, pp. 217
-
-
Tsang, W.T.1
-
115
-
-
0000561484
-
0 ∼ 0.13, z ∼ 0.29, ∼400 A) in an InP p-n-junction
-
0 ∼ 0.13, z ∼ 0.29, ∼400 A) In an InP p-n-junction. - Appl. Phys. Lett., 31, 534 (1977).
-
(1977)
Appl. Phys. Lett.
, vol.31
, pp. 534
-
-
Rezek, E.1
Shichijo, H.2
Vojak, B.A.3
Holonyak, N.4
-
117
-
-
20944448311
-
-
-6 cm. - Fiz. Tekh. Polupr. 19, 1108 (1985) (Sov. Phys. - Semicond. 19, 679 (1985)).
-
(1985)
Sov. Phys. - Semicond.
, vol.19
, pp. 679
-
-
-
118
-
-
0001151692
-
AlGaAs-heterostructure quantum wells grown by low temperature LPE
-
Alferov, Zh. I. et al., AlGaAs-heterostructure quantum wells grown by low temperature LPE. - Pisma Zh. Tehn. Fiz. 12, 1080 (1986) (Sov. Phys. - Techn. Phys. Lett. 12, 450 (1986)).
-
(1986)
Pisma Zh. Tehn. Fiz.
, vol.12
, pp. 1080
-
-
Alferov, Zh.I.1
-
119
-
-
0009695309
-
-
Alferov, Zh. I. et al., AlGaAs-heterostructure quantum wells grown by low temperature LPE. - Pisma Zh. Tehn. Fiz. 12, 1080 (1986) (Sov. Phys. - Techn. Phys. Lett. 12, 450 (1986)).
-
(1986)
Sov. Phys. - Techn. Phys. Lett.
, vol.12
, pp. 450
-
-
-
121
-
-
0009736976
-
-
2, L = 1150 μ, 300 K). - Fiz. Tekh. Polupr. 21, 914 (1987) (Sov. Phys. - Semicond. 21, 914 (1987)).
-
(1986)
Sov. Phys. - Techn. Phys. Lett.
, vol.12
, pp. 87
-
-
-
122
-
-
0009541754
-
2, L = 1150 μ, 300 K)
-
2, L = 1150 μ, 300 K). - Fiz. Tekh. Polupr. 21, 914 (1987) (Sov. Phys. - Semicond. 21, 914 (1987)).
-
(1987)
Fiz. Tekh. Polupr.
, vol.21
, pp. 914
-
-
Alferov, Zh.I.1
-
123
-
-
0009541754
-
-
2, L = 1150 μ, 300 K). - Fiz. Tekh. Polupr. 21, 914 (1987) (Sov. Phys. - Semicond. 21, 914 (1987)).
-
(1987)
Sov. Phys. - Semicond.
, vol.21
, pp. 914
-
-
-
124
-
-
0001369835
-
2, efficience = 59%)
-
2, efficience = 59%). - Fiz. Tekh. Polupr. 22, 1031 (1988) (Sov. Phys. - Semicond. 22, 650 (1988)); Garbuzov, D. Z. et al. Technical Digest CLEO, paper THU44, 396 (1988).
-
(1988)
Fiz. Tekh. Polupr.
, vol.22
, pp. 1031
-
-
Alferov, Zh.I.1
-
125
-
-
6244231386
-
-
2, efficience = 59%). - Fiz. Tekh. Polupr. 22, 1031 (1988) (Sov. Phys. - Semicond. 22, 650 (1988)); Garbuzov, D. Z. et al. Technical Digest CLEO, paper THU44, 396 (1988).
-
(1988)
Sov. Phys. - Semicond.
, vol.22
, pp. 650
-
-
-
126
-
-
0004173324
-
-
paper THU44
-
2, efficience = 59%). - Fiz. Tekh. Polupr. 22, 1031 (1988) (Sov. Phys. - Semicond. 22, 650 (1988)); Garbuzov, D. Z. et al. Technical Digest CLEO, paper THU44, 396 (1988).
-
(1988)
Technical Digest CLEO
, pp. 396
-
-
Garbuzov, D.Z.1
-
128
-
-
0000842703
-
2, T = 300 K) with quantum well restriction by short period superlattice of variable period
-
2, T = 300 K) with quantum well restriction by short period superlattice of variable period. - Pisma Zh. Tehn. Fiz. 14, 1803 (1988)
-
(1988)
Pisma Zh. Tehn. Fiz.
, vol.14
, pp. 1803
-
-
Alferov, Zh.I.1
-
131
-
-
0028425775
-
-
Faist, J. et al., Quantum cascade laser. - Science 264, 553 (1994). Electron Lett. 30, 865 (1994).
-
(1994)
Electron Lett.
, vol.30
, pp. 865
-
-
-
132
-
-
33745141474
-
New method for high-accuracy determination of the fine-structure constant based on quantized Hall resistance
-
Klitzing, K. v., Dorda, G. and Pepper, M., New method for high-accuracy determination of the fine-structure constant based on quantized Hall resistance. - Phys. Rev. Lett. 45, 494 (1980).
-
(1980)
Phys. Rev. Lett.
, vol.45
, pp. 494
-
-
Klitzing, K.V.1
Dorda, G.2
Pepper, M.3
-
133
-
-
35949019065
-
Two dimensional magnetotransport in the extreme quantum limit
-
Tsui, D. C., Stormer, H. L. and Gossard, A. C., Two dimensional magnetotransport in the extreme quantum limit. - Phys. Rev. Lett. 48, 1559 (1982).
-
(1982)
Phys. Rev. Lett.
, vol.48
, pp. 1559
-
-
Tsui, D.C.1
Stormer, H.L.2
Gossard, A.C.3
-
134
-
-
36749104998
-
Toward quantum well wires; fabrication and optical properties
-
Petroff, P. M., Gossard, A. C., Logan, R. A. and Weigman, W., Toward quantum well wires; fabrication and optical properties. - Appl. Phys. Lett. 41, 635 (1982).
-
(1982)
Appl. Phys. Lett.
, vol.41
, pp. 635
-
-
Petroff, P.M.1
Gossard, A.C.2
Logan, R.A.3
Weigman, W.4
-
135
-
-
21544475375
-
Multidimensional quantum well laser and temperature dependence of its threshold current
-
Arakawa, Y. and Sakaki, H., Multidimensional quantum well laser and temperature dependence of its threshold current. - Appl. Phys. Lett. 40, 939 (1982).
-
(1982)
Appl. Phys. Lett.
, vol.40
, pp. 939
-
-
Arakawa, Y.1
Sakaki, H.2
-
136
-
-
0001582023
-
Vertically stacked multiple-quantum-wire semiconductor diode lasers
-
Simhony, S. et al., Vertically stacked multiple-quantum-wire semiconductor diode lasers. - Appl. Phys. Lett. 59, 2225 (1991).
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 2225
-
-
Simhony, S.1
-
137
-
-
0000472517
-
Quantum size effect in three dimensional microscopic semiconductor crystals
-
Ekimov, A. I. and Onushchenko, A. A., Quantum size effect in three dimensional microscopic semiconductor crystals. - Pisma Zh. Eks. Teor. Fiz. 34, 363 (1981) (JETP Lett. 34, 345 (1981)).
-
(1981)
Pisma Zh. Eks. Teor. Fiz.
, vol.34
, pp. 363
-
-
Ekimov, A.I.1
Onushchenko, A.A.2
-
138
-
-
0001260315
-
-
Ekimov, A. I. and Onushchenko, A. A., Quantum size effect in three dimensional microscopic semiconductor crystals. - Pisma Zh. Eks. Teor. Fiz. 34, 363 (1981) (JETP Lett. 34, 345 (1981)).
-
(1981)
JETP Lett.
, vol.34
, pp. 345
-
-
-
139
-
-
0000886898
-
Interband and light absorptions in a semiconductor sphere
-
Efros, Al. L. and Efros, A. L., Interband and light absorptions in a semiconductor sphere. - Fiz. Tekh. Polupr. 16, 1209 (1982) (Sov. Phys. - Semicond. 16, 772 (1982)).
-
(1982)
Fiz. Tekh. Polupr.
, vol.16
, pp. 1209
-
-
Efros, A.L.1
Efros, A.L.2
-
140
-
-
0009390584
-
-
Efros, Al. L. and Efros, A. L., Interband and light absorptions in a semiconductor sphere. - Fiz. Tekh. Polupr. 16, 1209 (1982) (Sov. Phys. - Semicond. 16, 772 (1982)).
-
(1982)
Sov. Phys. - Semicond.
, vol.16
, pp. 772
-
-
-
141
-
-
21544477864
-
Growth by molecular beam epitaxy and characterization of InAs/ GaAs strained-layer superlattices
-
Goldstein, L., Glas, F., Marzin, J. Y., Charasse, M. N. and Roux, G. Le., Growth by molecular beam epitaxy and characterization of InAs/ GaAs strained-layer superlattices. - Appl. Phys. lett. 47, 1099 (1985).
-
(1985)
Appl. Phys. Lett.
, vol.47
, pp. 1099
-
-
Goldstein, L.1
Glas, F.2
Marzin, J.Y.3
Charasse, M.N.4
Le, R.G.5
-
142
-
-
0000471224
-
Faceting transitions in crystals
-
Andreev, A. F., Faceting transitions in crystals. - Zh. Eks. Teor. Fiz. 80, 2042 (1981) (Sov. Phys. - JETP 53, 1063 (1981)).
-
(1981)
Zh. Eks. Teor. Fiz.
, vol.80
, pp. 2042
-
-
Andreev, A.F.1
-
143
-
-
0000656427
-
-
Andreev, A. F., Faceting transitions in crystals. - Zh. Eks. Teor. Fiz. 80, 2042 (1981) (Sov. Phys. - JETP 53, 1063 (1981)).
-
(1981)
Sov. Phys. - JETP
, vol.53
, pp. 1063
-
-
-
144
-
-
0000835993
-
On the theory of the equilibrium shape of crystals
-
Marchenko, V. I., On the theory of the equilibrium shape of crystals. - Zh. Eks. Teor. Fiz. 81, 1141 (1981) (Sov. Phys. - JETP 54, 605 (1981)); Marchenko, V. I., Possible structures and phase transitions of crystal surfaces. - Pisma Zh. Eks. Teor. Fiz. 33, 307 (1981) (Sov. Phys. JETP Lett. 33, 381 (1981)).
-
(1981)
Zh. Eks. Teor. Fiz.
, vol.81
, pp. 1141
-
-
Marchenko, V.I.1
-
145
-
-
0000821548
-
-
Marchenko, V. I., On the theory of the equilibrium shape of crystals. - Zh. Eks. Teor. Fiz. 81, 1141 (1981) (Sov. Phys. - JETP 54, 605 (1981)); Marchenko, V. I., Possible structures and phase transitions of crystal surfaces. - Pisma Zh. Eks. Teor. Fiz. 33, 307 (1981) (Sov. Phys. JETP Lett. 33, 381 (1981)).
-
(1981)
Sov. Phys. - JETP
, vol.54
, pp. 605
-
-
-
146
-
-
0343600616
-
Possible structures and phase transitions of crystal surfaces
-
Marchenko, V. I., On the theory of the equilibrium shape of crystals. - Zh. Eks. Teor. Fiz. 81, 1141 (1981) (Sov. Phys. - JETP 54, 605 (1981)); Marchenko, V. I., Possible structures and phase transitions of crystal surfaces. - Pisma Zh. Eks. Teor. Fiz. 33, 307 (1981) (Sov. Phys. JETP Lett. 33, 381 (1981)).
-
(1981)
Pisma Zh. Eks. Teor. Fiz.
, vol.33
, pp. 307
-
-
Marchenko, V.I.1
-
147
-
-
0000829523
-
-
Marchenko, V. I., On the theory of the equilibrium shape of crystals. - Zh. Eks. Teor. Fiz. 81, 1141 (1981) (Sov. Phys. - JETP 54, 605 (1981)); Marchenko, V. I., Possible structures and phase transitions of crystal surfaces. - Pisma Zh. Eks. Teor. Fiz. 33, 307 (1981) (Sov. Phys. JETP Lett. 33, 381 (1981)).
-
(1981)
Sov. Phys. JETP Lett.
, vol.33
, pp. 381
-
-
-
148
-
-
27244462330
-
Direct synthesis of corrugated superlattices on non(100) - Oriented surfaces
-
Nötzel, R., Ledentsov, N. N., Däveritz, L., Hohenstein, M. and Ploog, K., Direct synthesis of corrugated superlattices on non(100) - oriented surfaces. - Phys. Rev. Lett. 67, 3812 (1991).
-
(1991)
Phys. Rev. Lett.
, vol.67
, pp. 3812
-
-
Nötzel, R.1
Ledentsov, N.N.2
Däveritz, L.3
Hohenstein, M.4
Ploog, K.5
-
149
-
-
0000564155
-
Theory of quantum wire formation on corrugated surfaces
-
Shchukin, V. A., Borovkov, A. I., Ledentsov, N. N. and Kop'ev, P. S., Theory of quantum wire formation on corrugated surfaces. - Phys. Rev. B51, 17767 (1995).
-
(1995)
Phys. Rev.
, vol.B51
, pp. 17767
-
-
Shchukin, V.A.1
Borovkov, A.I.2
Ledentsov, N.N.3
Kop'ev, P.S.4
-
150
-
-
0028387765
-
Optical charachterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces
-
Wang, P. D., Ledentsov, N. N., Sotomayor Torres, C. M., Kop'ev, P. S. and Ustinov, V. M., Optical charachterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high-index surfaces. - Appl. Phys. Lett. 64, 1526 (1994).
-
(1994)
Appl. Phys. Lett.
, vol.64
, pp. 1526
-
-
Wang, P.D.1
Ledentsov, N.N.2
Sotomayor Torres, C.M.3
Kop'ev, P.S.4
Ustinov, V.M.5
-
151
-
-
33244468006
-
Initial stages of InAs epitaxy on vicinal GaAs(001)-(2 × 4)
-
Bressler-Hul, V., Lorke, A., Varma, S., Petroff, P. M., Pond, K. and Weinberg, W. H., Initial stages of InAs epitaxy on vicinal GaAs(001)-(2 × 4). - Phys. Rev. B50, 8479 (1994).
-
(1994)
Phys. Rev.
, vol.B50
, pp. 8479
-
-
Bressler-Hul, V.1
Lorke, A.2
Varma, S.3
Petroff, P.M.4
Pond, K.5
Weinberg, W.H.6
-
152
-
-
0042051803
-
Luminescence and structural properties of (In, Ga)As/GaAs quantum dots
-
Vancouver, Canada (1994). (Edited by D. J. Lockwood) World Scientific, Singapore
-
Ledentsov, N. N. et al., Luminescence and structural properties of (In, Ga)As/GaAs quantum dots. - Proc. of 22nt International Conference on the Physics of Semiconductors. Vancouver, Canada (1994). (Edited by D. J. Lockwood) (World Scientific, Singapore, 1995) (1985).
-
(1985)
Proc. of 22nt International Conference on the Physics of Semiconductors
-
-
Ledentsov, N.N.1
-
153
-
-
0000197844
-
Low threshold current density injection heterolaser based on selforganized quantum dots formed by metalorganic vapour phase deposition
-
Semiconductors
-
Alferov, Zh. I. et al., Low threshold current density injection heterolaser based on selforganized quantum dots formed by metalorganic vapour phase deposition. - Fiz. Tekh. Polupr. 30, 357 (1996) (Semiconductors).
-
(1996)
Fiz. Tekh. Polupr.
, vol.30
, pp. 357
-
-
Alferov, Zh.I.1
-
154
-
-
5444230424
-
Spontaneous ordering of arrays of coherent strained islands
-
Shchukin, V. A., Ledentsov, N. N., Kop'ev, P. S. and Bimberg, D., Spontaneous ordering of arrays of coherent strained islands. Phys. Rev. Lett. 75, 2968 (1995); Shchukin, V. A., Ledentsov, N. N., Grundman, M., Kop'ev, P. S. and Bimberg, D., Strain-induced formation and tuning of ordered nanostructures on crystal surfaces. - Surface Science (in press) (1996).
-
(1995)
Phys. Rev. Lett.
, vol.75
, pp. 2968
-
-
Shchukin, V.A.1
Ledentsov, N.N.2
Kop'ev, P.S.3
Bimberg, D.4
-
155
-
-
0030148661
-
Strain-induced formation and tuning of ordered nanostructures on crystal surfaces
-
Shchukin, V. A., Ledentsov, N. N., Kop'ev, P. S. and Bimberg, D., Spontaneous ordering of arrays of coherent strained islands. Phys. Rev. Lett. 75, 2968 (1995); Shchukin, V. A., Ledentsov, N. N., Grundman, M., Kop'ev, P. S. and Bimberg, D., Strain-induced formation and tuning of ordered nanostructures on crystal surfaces. - Surface Science (in press) (1996).
-
(1996)
Surface Science (In Press)
-
-
Shchukin, V.A.1
Ledentsov, N.N.2
Grundman, M.3
Kop'ev, P.S.4
Bimberg, D.5
-
156
-
-
0002136990
-
Injection heterolaser based on vertically coupled quantum dots in GaAs matrix
-
Semiconductors
-
Alferov, Zh. I. et al., Injection heterolaser based on vertically coupled quantum dots in GaAs matrix. - Fiz. Tekh. Polupr. 30, 351 (1996) (Semiconductors).
-
(1996)
Fiz. Tekh. Polupr.
, vol.30
, pp. 351
-
-
Alferov, Zh.I.1
-
157
-
-
4244115357
-
Ultranarrow luminescence Unes from single quantum dots
-
Grundman, M. et al., Ultranarrow luminescence Unes from single quantum dots. - Phys. Rev. Lett. 74, 4043 (1995).
-
(1995)
Phys. Rev. Lett.
, vol.74
, pp. 4043
-
-
Grundman, M.1
-
158
-
-
0028499029
-
0 injection laser emission from (InGa)As quantum dots
-
0 injection laser emission from (InGa)As quantum dots. - Electronics Lett. 30, 1416 (1994).
-
(1994)
Electronics Lett.
, vol.30
, pp. 1416
-
-
Kirstaedter, N.1
-
159
-
-
5344253596
-
Injection heterolaser based on quantum dots with ultrahigh temperature stability of the threshold current up 50°C
-
Semiconductors
-
Maximov, M. V. et al., Injection heterolaser based on quantum dots with ultrahigh temperature stability of the threshold current up 50°C. - Fiz. Tekh. Polupr. - in press (Semiconductors).
-
Fiz. Tekh. Polupr. - in Press
-
-
Maximov, M.V.1
-
160
-
-
0029706035
-
Growth, characterization, theory and lasing of vertically stacked quantum dots
-
Schwabish-Gmund, Germany
-
Grundman, M. et al., Growth, characterization, theory and lasing of vertically stacked quantum dots. - Proc. 8th Int. Conf. on Indium Phosphide and Related Materials. Schwabish-Gmund, 1996, Germany.
-
(1996)
Proc. 8th Int. Conf. on Indium Phosphide and Related Materials
-
-
Grundman, M.1
-
161
-
-
85088619989
-
2) injection lasers based on vertically coupled in InGaAs/GaAs quantum dots
-
Malibu, USA, August (invited paper). Proceedings to be published in J. of Cryst. Growth
-
2) injection lasers based on vertically coupled in InGaAs/GaAs quantum dots. - IX Int. Conf. on MBE, Malibu, USA, August 1996 (invited paper). Proceedings to be published in J. of Cryst. Growth.
-
(1996)
IX Int. Conf. on MBE
-
-
Ustinov, V.M.1
-
162
-
-
0029341990
-
Radiative recombination in type II GaSb/GaAs quantum dots
-
Hatami, F. et al., Radiative recombination in type II GaSb/GaAs quantum dots. Appl. Phys. Lett. 67, 656, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 656
-
-
Hatami, F.1
|