InGaN blue light-emitting diodes with ZnO nucleation layers prepared by the sol-gel method

Semiconductor Science and Technology

Volumn 22, Issue 10, 2007, Pages 1178-1182

  Chen, Lung Chien ^a   Huang, Jeng Bing ^b   Cheng, Pei Jong ^a   Hong, Lu Sheng ^b  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMITTING DIODES; NUCLEATION; QUANTUM EFFICIENCY; SAPPHIRE; SOL-GEL PROCESS; ZINC OXIDE;

INGAN BLUE LIGHT-EMITTING DIODES; INJECTION CURRENT; ZNO NUCLEATION LAYER;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 34748828623     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/10/017     Document Type: Article

References (36)

1. Nakamura S, Mukai T and Senoh M 1994 Appl. Phys. Lett. 64 1687
2. Mukai T, Yamada M and Nakamura S 1999 Japan J. Appl. Phys. 38 3976
3. Chen L C and Huang Y L 2004 Solid-State Electron. 48 1239
4. Chen L C and Feng H C 2005 Phys. Status Solidi a 202 2836
5. Nakamura S et al 1998 Appl. Phys. Lett. 72 2014
6. Su Y K, Chiou Y Z, Juang F S, Chang S J and Sheu J K 2001 Japan J. Appl. Phys. 40 2996
7. Jiang H, Nakata N, Zhao G Y, Ishikawa H, Shao C L, Egawa T, Jimbo T and Umeno M 2001 Japan J. Appl. Phys. 40 L505
8. Su Y K, Chang S J, Chen C H, Chen J F, Chi G C, Sheu J K, Lai W C and Tasi J M 2002 IEEE Sensors J. 2 366
9. Sakai A, Sunakawa H and Usui A 1997 Appl. Phys. Lett. 71 2259
10. Sakai A, Sunakawa H and Usui A 1998 Appl. Phys. Lett. 73 481
11. Fini P, Zhao L, Moran B, Hansen M, Marchand H, Ibbetson J P, DenBaars S P, Mishra U K and Speck J S 1999 Appl. Phys. Lett. 75 1706
12. Tadatomo K, Okagawa H, Ohuchi Y, Tsunekawa T, Imada Y, Kato M and Taguchi T 2001 Japan J. Appl. Phys. 40 L583
13. Mukai T and Nakamura S 1999 Japan J. Appl. Phys. 38 5735
14. Nakamura S et al 1998 Appl. Phys. Lett. 72 211
15. Nakamura S et al 1998 Japan J. Appl. Phys. 37 L309
16. Riemann T, Christen J, Beaumont B and Faurie J P 2004 Superlat. Microst. 36 833
17. Kidoguchi I, Ishibashi A, Sugahara G and Ban Y 2000 Appl. Phys. Lett. 76 3768
18. Haffouz S, kirilyuk V, Hageman P R, Macht L, Weyher J L and Larsen P K 2001 Appl. Phys. Lett. 79 2390
19. Park S E, Lim S M, Lee C R, Kim C S and B S O 2003 J. Crystal Growth 249 487
20. Haffouz S, Lahreche H, Vennegues P, de Mierry P, Beaumont B, Omnes F and Gibart P 1998 Appl. Phys. Lett. 73 1278
21. Pecz B, Makkai Zs, Frayssinet E, Beaumont B and Gibart P 2005 Phys. Status Solidi c 2 1310
22. Wei S C, Su Y K, Chang S J, Chen S M and Li W L 2005 IEEE Trans. Electron. Devices 52 1104
23. Liu C H, Chuang R W, Chang S J, Su Y K, Kuo C H, Tsai J M and Lin C C 2004 Mater. Sci. Eng. B 111 214
24. Benzarti Z, Halidou I, Boufaden T, EI Jani B, Juillaguet S and Ramonda M 2004 Phys. Status Solidi a 201 502
25. Halidou I, Benzarti Z, Boufaden T, EI Jani B, Juillaguet S and Ramonda M 2004 Mater. Sci. Eng. B 110 251
26. Kuo C H et al 2003 Solid-State Electron. 47 2019
27. Sakai S, Wang T, Morishima Y and Naoi Y 2000 J. Cryst. Growth 221 334
28. Liu C H, Chuang R W, Chang S J, Su Y K, Kuo C H, Tsai J M and Lin C C 2004 Mater. Sci. Eng. B 111 214
29. Iwaya M, Takeuchi T, Yamaguchi S, Wetzel C, Amano H and Akasaki I 1998 Japan J. Appl. Phys. 37 L316
30. Natsume Y and Sakata H 2000 Thin Solid Films 372 30
31. Li H, Wang J, Liu H, Zhang H and Li X 2005 J. Cryst. Growth 275 943
32. Wu J J, Wen H I, Tseng C H and Liu S C 2004 Adv. Funct. Mater. 14 806
33. Bhattacharya P 1997 Semiconductor Optoelectronic Revicw 2nd edn (Englewoodcliffs, NJ: Prentice-Hall)
34. Chang S J et al 2003 Solid-State Electron. 47 1539
35. Pan C C, Lee C M, Liu J W, Chen G T and Chyi J I 2004 Appl. Phys. Lett. 84 5249
36. Chen L C, Chen C M, Liu C S and Hong L S 2006 J. Electrochem. Soc. 153 G931