High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 6 B, 2001, Pages

  Tadatomo, Kazuyuki ^a   Okagawa, Hiroaki ^a   Ohuchi, Youichiro ^a   Tsunekawa, Takashi ^a   Imada, Yoshiyuki ^a   Kato, Munehiro ^a,b   Taguchi, Tsunemasa ^a,c  

^a Mitsubishi Cable Industries Ltd   (Japan)

^b STANLEY ELECTRIC CO LTD   (Japan)

^c YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

ELO; GaN; InGaN; MOVPE; SAG; Sapphire; UV LED

Indexed keywords

DISLOCATIONS (CRYSTALS); FABRICATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

EPITAXIAL LATERAL OVERGROWTH (OLE); MULTI-QUANTUM WELL (MQW) STRUCTURES;

LIGHT EMITTING DIODES;

EID: 0035874864     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l583     Document Type: Article

References (19)