Transmission electron microscopy of GaN layers grown by ELO and micro - ELO techniques

Physica Status Solidi C: Conferences

Volumn 2, Issue 4, 2005, Pages 1310-1313

  Pecz B ^a   Makkai, Zs ^a   Frayssinet, E ^b   Beaumont, B ^b   Gibart, P ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b LUMILOG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; NUCLEATION; SAPPHIRE; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITY; EPITAXIAL LATERAL OVERGROWTH (ELO); NUCLEATION LAYER (NL);

GALLIUM NITRIDE;

EID: 27344439808     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460443     Document Type: Conference Paper

References (6)

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