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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5735-5739

Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown on epitaxially laterally overgrown GaN substrates

(2) Mukai, Takashi a Nakamura, Shuji a

a NICHIA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; LIGHT EMISSION; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

EPITAXIALLY LATERALLY OVERGROWN GALLIUM NITRIDE; EXTERNAL QUANTUM EFFICIENCY (EQE);

LIGHT EMITTING DIODES;

EID: 0033357501 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.5735 Document Type: Article

Times cited : (182)

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