Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment

Materials Science and Engineering: B

Volumn 110, Issue 3, 2004, Pages 251-255

  Halidou, I ^a   Benzarti, Z ^a   Boufaden, T ^a   El Jani, B ^a   Juillaguet, S ^b   Ramonda, M ^b  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b UNIV MONTPELLIER   (France)

Author keywords

AFM; MOVPE; Photoluminescence; Reflectivity; SiN treatment

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; CRYSTALS; METALLORGANIC VAPOR PHASE EPITAXY; PARAMETER ESTIMATION; PHOTOLUMINESCENCE; SAPPHIRE; SILANES;

OPTIMAL DURATION; OPTIMAL VALUE; SIN TREATMENT; THERMAL MISMATCH;

GALLIUM NITRIDE;

EID: 2942532915     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.02.002     Document Type: Article

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