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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2996-2999

GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals

(5) Su, Yan Kuin a Chiou, Yu Zung a Juang, Fuh Shyang b Chang, Shoou Jin a Sheu, Jinn Kung c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL FORMOSA UNIVERSITY (Taiwan)

c NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

GaN; MSM; Photodetector; Schottky

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

METAL SEMICONDUCTOR METAL (MSM) PHOTODETECTORS; SCHOTTKY CONTACT METALS;

PHOTODETECTORS;

EID: 0035300767 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.2996 Document Type: Article

Times cited : (96)

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