Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 5 B, 2001, Pages

  Jiang, Hao ^a   Nakata, Naoyuki ^a   Zhao, Guang Yuan ^a   Ishikawa, Hiroyasu ^a   Shao, Chun Lin ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Dark current; GaN; Internal gain; MSM PD; Responsivity

Indexed keywords

CARRIER CONCENTRATION; EPITAXIAL GROWTH; EXCITONS; FABRICATION; GALLIUM NITRIDE; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SUBSTRATES;

ULTRAVIOLET PHOTODETECTORS;

PHOTODETECTORS;

EID: 0035872509     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l505     Document Type: Article

References (11)