Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 7 B, 1999, Pages 3976-3981

  Mukai, Takashi ^a   Yamada, Motokazu ^a   Nakamura, Shuji ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

Amber; Blue; Dislocations; ELOG; GaN; Green; InGaN; LEDs; SQW

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; ELECTRON ENERGY LEVELS; LIGHT EMISSION; PIEZOELECTRICITY; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

BAND FILLING EFFECT; EMISSION WAVELENGTH; SINGLE QUANTUM WELL;

LIGHT EMITTING DIODES;

EID: 0033309549     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3976     Document Type: Article

References (5)

1. S. Nakamura and T. Mukai: Jpn. J. Appl. Phys. 31 (1992) L1457.
2. S. Nakamura, M. Scnoh and T. Mukai: Jpn. J. Appl. Phys. 32 (1993) L8.
3. S. Nakamura, T. Mukai, M. Senoh, S. Nagahama and N. Iwasa: J. Appl. Phys. 74 (1993) 3911.
4. S. Chichibu, T. Azuhata, T. Sota and S. Nakamura: Appl. Phys. Lett. 69 (1996) 4188.
5. S. Chichibu, T. Azuhata, T. Sota and S. Nakamura: Appl. Phys. Lett. 70 (1997) 2822.