SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 36, Issue 4-6, 2004, Pages 833-847

Self-organized domain formation in low-dislocation-density GaN

(5) Riemann, T a Christen, J a Beaumont, B b Faurie, J P b Gibart, P b

a OTTO VON GUERICKE UNIVERSITY (Germany)

b LUMILOG (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); IMPURITIES; METALLORGANIC VAPOR PHASE EPITAXY; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITY; HETEROEPITAXY; SCANNING CATHODOLUMINESCENCE MICROSCOPY; SELF-ORGANIZED DOMAIN FORMATION;

GALLIUM NITRIDE;

EID: 10044222304 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1016/j.spmi.2004.09.039 Document Type: Article

Times cited : (16)

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