InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers

Materials Science and Engineering: B

Volumn 111, Issue 2-3, 2004, Pages 214-217

  Liu, C H ^a   Chuang, R W ^b   Chang, S J ^b   Su, Y K ^b   Kuo, C H ^b   Tsai, J M ^c   Lin, C C ^c  

^a NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c South Epitaxy Corporation   (Taiwan)

Author keywords

AFM; Buffer; LED; Life time; SiN; TEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER; LIFE TIME; SIN;

LIGHT EMITTING DIODES;

EID: 3242677238     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.04.015     Document Type: Article

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