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Applied Physics Letters

Volumn 84, Issue 25, 2004, Pages 5249-5251

Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes

(5) Pan, Chang Chi a Lee, Chia Ming a Liu, Jia Wen a Chen, Guan Ting a Chyi, Jen Inn a

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CURRENT DENSITY; DEGRADATION; ELECTROLUMINESCENCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE SEPARATION; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

LOCALIZED STATES; LUMINESCENCE EFFICIENCY; MULTIPLE-QUANTUM WELLS; X-RAY ROCKING CURVE ANALYSIS;

LIGHT EMITTING DIODES;

EID: 3142782072 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1765207 Document Type: Article

Times cited : (44)

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