Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1322-1329

  Goguenheim, D ^a   Pic, D ^a,b   Ogier, J L ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; FAILURE MODES; OXIDES; RELIABILITY ANALYSIS; WEIBULL DISTRIBUTION;

OXIDE RELIABILITY; OXIDE THICKNESS; VOLTAGE DEPENDENCE;

CMOS INTEGRATED CIRCUITS;

EID: 34548772271     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.048     Document Type: Article

References (44)

1. Cheung PC. Thin gate oxide reliability-the current status http: http://www.ece.rutgers.edu/~kpckpc/Papers/NanoSymp2001.doc.
2. Stathis J.H. Reliability limits for the gate insulator in CMOS technology. IBM J Res Dev 46 2/3 (2002) 265-286
3. Wu E.Y., Nowak E.J., Vayshenker A., Lai W.L., and Harmon D.L. CMOS scaling beyond the 100-nm node with silicon dioxide based gate dielectrics. IBM J Res Dev 46 2/3 (2002) 287-298
4. Azizi, N. Yiannacouras Peter, Gate oxide breakdown; 2003. citeseer.ist.psu.edu/azizi03gate.html.
5. Thomas A. Challenges of scaling gate oxides, 0301-712 Adv. Field Effect Devices, Rochester Institute of Technology.
6. ITRS International technology roadmap for semiconductors; 2006 upgrade, www.itrs.net.
7. Wu E.Y., and Sune J. Power-law voltage acceleration: a key element for ultra-thin gate oxide reliability. Microelectron Reliab 45 (2005) 1809-1834
8. Degraeve R., et al. A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides. IEDM (1995) 863
9. Vincent E., et al. IRW99 proceedings (1999) 158-165
10. Monsieur F., et al. A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment. Proc IEEE Int Reliab Phys Sympos (2002) 45
11. Pompl T., Kerber A., Röhner M., and Kerber M. Gate voltage and oxide thickness dependence of progressive wearout of ultra-thin gate oxides. Microelectron Reliab 46 (2006) 1603-1607
12. Wu Y., Qi X., Bang D., Lucovsky G., and Lin M.-R. Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides. IEEE Electron Dev Lett 20 6 (1999) 262-264
13. Wu E.Y., and Vollersten R.P. On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination-Part I: theory, methodology, experimental techniques. IEEE Trans Electr Dev 49 12 (2002) 2131-2140
14. Wu E.Y., Stathis J.H., and Han L.K. Ultra-thin oxide reliability for ULSi application. Semicond Sci Technol 15 (2000) 462
15. 2 gate oxides. Microelectron Reliab 43 (2003) 1185-1192
16. Denais M., Huard V., Parthasarathy C., Ribes G., Perrier F., Revil N., et al. Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2 nm gate-oxide. IEEE Trans Dev Mater Reliab 4 (2004) 715-722
17. Denais M., Bravaix A., Huard V., Parthasarathy C., Ribes G., Perrier F., et al. On-the-fly characterization of NBTI in ultra-thin gate-oxide PMOSFET's. Int Electr Dev Meet Tech Dig (IEDM'04) (2004) 109-112
18. 2 oxides: influence of accelerated ageing methods and extrapolation models. Proceedings of 25th international conference on microelectronics (MIEL'06), Nis-Belgrade: Serbie- Monténégro; 2006. p. 528-531.
19. Wu E.Y., Sune J., and Lai W. On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination-Part II: experimental results and the effect of stress conditions. IEEE Trans Electr Dev 49 12 (2002) 2141-2150
20. Degraeve R., Groesenecken G., Bellens R., Depas M., and Maes H.E. A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides. Proc IEDM (1995) 863-866
21. Sune J. New physics based analytic approach to the thin oxide breakdown statistics. IEEE Electr Dev Lett 22 (2001) 296-298
22. Degraeve R., Groeseneken G., Bellens R., Ogier J.-L., Depas M., Roussel P.J., et al. New insights in the relation between electron trap generation and the statistical properties of oxide breakdown. IEEE Trans Electr Dev 45 4 (1998) 904
23. Chen I.C., Holland S.E., and Hu C. IEEE Trans Electr Dev ED32 (1989) 413
24. 2 breakdown model for very low voltage lifetime extrapolation. IEEE Trans Electr Dev 41 5 (1994)
25. Hiraiwa A, Sakai S, Ishikawa D. Voltage-driven distribution of gate oxide breakdown. 41st Annual international reliability physics symposium, Dallas: Texas; 2003. p. 582-583.
26. Wu E.Y., Aitken J., Nowak E., Vayshenker A., Varekamp P., Hueckel G., et al. Voltage-dependent voltage- acceleration of oxide breakdown for ultra-thin oxides. Proc Int Electr Dev Meet (2000) 541-544
27. BD power-law for voltage dependence of oxide breakdown in ultrathin gate oxides. IEEE Trans Electr Dev 49 12 (2002) 2244-2252
28. McMahon W., Haggag A., and Hess K. Reliability scaling issues for nanoscale devices. IEEE Trans Electr Dev 2 1 (2003) 33-38
29. 2 films. Phys Rev Lett 92 8 (2004) 372-375
30. Vollertsen R., and Wu E.Y. Voltage acceleration and t63.2 of 1.6-10 nm gate oxides. Microelectron Reliab 44 (2004) 909-916
31. 2 based dielectric to its limit. Microelectron Reliab 43 (2003) 1175-1184
32. Monsieur F., Vincent E., Bruyere S., Roy D., Pananakakis G., and Ghibaudo G. Determination of dielectric breakdown Weibull distribution parameters confidence bounds for accurate ultrathin oxide reliability prediction. Microelectron Reliab 41 (2001) 1295-1300
33. Wu E., and Sune J. New insights in polarity dependent oxide breakdown for ultra thin gate oxides. IEEE Electron Dev Lett 23 (2002) 494-496
34. Goguenheim D., Bravaix A., Gomri S., Moragues J.M., Monserie C., Legrand N., et al. Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. Microelectron Reliab 45 (2005) 487-492
35. Cheung K.P. Plasma-charging damage in ultra-thin gate oxide. Microelectron Reliab 40 (2000) 1981-1986
36. 2O nitridation. Solid State Electron 43 (1999) 2057-2060
37. Wu C.-T., Mieckowski A., Ridley Sr. R.S., Dolny G., Grebs T., Linn J., et al. Effect of nitridation on the reliability of thick gate oxides. Microelectron Reliab 43 (2003) 43-47
38. Xu J.P., Lai P.T., and Cheng Y.C. Electrical properties of different NO-annealed oxynitrides. J Non-Cryst Solids 254 (1999) 94-98
39. Gusev E.P., Buchanan D.A., Jamison P., Zabel T.H., and Copel M. Ultrathin nitrided gate dielectrics by plasma assisted processing. Microelectron Eng 48 (1999) 67-70
40. 3 nitridation and rapid thermal annealing for 0.1 μm and beyond CMOS technology application. Solid State Electron 46 (2002) 539-544
41. Pompl T., Wurzer H., Kerber M., and Eisele I. Influence of gate oxide breakdown on MOSFET device operation. Microelectron Reliab 40 (2000) 37-47
42. Kaczer B., Degraeve R., Mahmoud R., Van de Mieroop K., Roussel P.J., and Groeseneken G. Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability. IEEE Trans Electron Dev 49 3 (2002) 500-506
43. Fernandez R., Rodriguez R., Nafria M., and Aymerich X. A new approach to the modeling of oxide breakdown on CMOS circuits. Microelectron Reliab 44 (2004) 1519-1522
44. Ghidini G., Garavaglia A., Giusto G., Bottini R., and Brazzelli D. Soft and hard breakdown : impact of annealing recovery on transistors performances. Microelectron Eng 72 (2004) 5-9