Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1603-1607

  Pompl, T ^a   Kerber, A ^a   Rohner M ^a   Kerber, M ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; MATHEMATICAL MODELS; VOLTAGE CONTROL; VOLTAGE MEASUREMENT;

BREAKDOWN PATHS; GATE OXIDES; VOLTAGE ACCELERATION MODELS;

THYRISTORS;

EID: 33747779669     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.042     Document Type: Article

References (15)

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