Statistics of soft and hard breakdown in thin SiO2 gate oxides

Microelectronics Reliability

Volumn 43, Issue 8, 2003, Pages 1185-1192

  Sune J ^a   Wu, E Y ^b   Jimenez D ^a   Lai, W L ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; FIELD EFFECT SEMICONDUCTOR DEVICES; LEAKAGE CURRENTS; STATISTICAL METHODS;

HARD BREAKDOWN; SOFT BREAKDOWN;

SILICA;

EID: 0041663670     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00170-7     Document Type: Conference Paper

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