The 1.3-1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 μm and beyond CMOS technology application

Solid-State Electronics

Volumn 46, Issue 4, 2002, Pages 539-544

  Chen, C H ^a   Fang, Y K ^a   Yang, C W ^a   Tsair, Y S ^a   Wang, M F ^b   Yao, L G ^b   Chen, S C ^b   Yu, C H ^b   Liang, M S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Gate dielectric; NH3; Nitrided oxide; Ultra thin

Indexed keywords

AMMONIA; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; HYSTERESIS; LEAKAGE CURRENTS; NITRIDING; RAPID THERMAL ANNEALING;

GATE DIELECTRICS; NITRIDATION;

GATES (TRANSISTOR);

EID: 0036533288     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00274-X     Document Type: Article

References (18)

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