Improvement of oxynitride reliability by two-step N2O nitridation

Solid-State Electronics

Volumn 43, Issue 11, 1999, Pages 2057-2060

  Chang Liao, Kuei Shu ^a   Ku, Jang Ming ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; MOS CAPACITORS; NITRIDING; NITROGEN OXIDES; RELIABILITY; SEMICONDUCTING SILICON; SILICA; ULTRATHIN FILMS;

BORON PENETRATION EFFECTS; ELECTRICAL RELIABILITY; GATE OXYNITRIDE; HOT ELECTRON INDUCED FLATBAND VOLTAGE SHIFT;

GATES (TRANSISTOR);

EID: 0033226117     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00160-4     Document Type: Article

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