Influence of gate oxide breakdown on MOSFET device operation

Microelectronics Reliability

Volumn 40, Issue 1, 2000, Pages 37-47

  Pompl, T ^a   Wurzer, H ^a   Kerber, M ^a   Eisele, I ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDES; SEMICONDUCTOR DEVICE MODELS; THERMOANALYSIS;

GATE INDUCED DRAIN LEAKAGE CURRENTS (GIDL); HARD BREAKDOWN (HBD); SOFT BREAKDOWN (SBD);

MOSFET DEVICES;

EID: 0033874101     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00204-8     Document Type: Article

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