Long range statistical lifetime prediction of ultra-thin SiO2 oxides: Influence of accelerated ageing methods and extrapolation models

2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

Volumn , Issue , 2006, Pages 528-531

  Pic, D ^a   Goguenheim, D ^b   Ogier, J L ^a  

^a STMICROELECTRONICS   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEGRADATION; EXTRAPOLATION; LOW-K DIELECTRIC; MICROELECTRONICS; SILICA;

ACCELERATED AGEING; DEGRADATION MECHANISM; EXPERIMENTAL ERRORS; EXPERIMENTAL METHODS; LIFETIME PREDICTION; RELAXATION PHENOMENA; RELIABILITY MODEL; TIME DEPENDENT DIELECTRIC BREAKDOWN;

DIELECTRIC MATERIALS;

EID: 77956518453     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMEL.2006.1651019     Document Type: Conference Paper

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