Soft and hard breakdown: Impact of annealing recovery on transistor performances

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 5-9

  Ghidini, G ^a   Garavaglia, A ^b   Giusto, G ^a   Bottini, R ^a   Brazzelli, D ^a  

^a STMICROELECTRONICS   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; FAILURE ANALYSIS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDES; PERCOLATION (SOLID STATE); RELIABILITY; STRESS ANALYSIS; THERMAL EFFECTS; TRANSCONDUCTANCE;

ANNEALING RECOVERY; HARD BREAKDOWN;

TRANSISTORS;

EID: 1642618959     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.008     Document Type: Conference Paper

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