Electrical properties of different NO-annealed oxynitrides

Journal of Non-Crystalline Solids

Volumn 254, Issue 1-3, 1999, Pages 94-98

  Xu, J P ^a   Lai, P T ^b   Cheng, Y C ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; ELECTRICAL ENGINEERING; GATES (TRANSISTOR); INTERFACES (MATERIALS); NITRIDING; NITROGEN; SILICA; SILICON NITRIDE;

CHARGE TRAPPING; GATE DIELECTRICS; OXYNITRIDES;

DIELECTRIC MATERIALS;

EID: 0032685557     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(99)00435-4     Document Type: Article

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