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Volumn 48, Issue 1, 1999, Pages 67-70
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Ultrathin nitrided gate dielectrics by plasma-assisted processing
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ATOMIC FORCE MICROSCOPY;
CAPACITANCE;
CURRENT VOLTAGE CHARACTERISTICS;
DIELECTRIC FILMS;
ELECTRIC BREAKDOWN OF SOLIDS;
ELLIPSOMETRY;
FILM GROWTH;
LEAKAGE CURRENTS;
OXIDES;
SILICA;
ULTRATHIN FILMS;
CONSTANT VOLTAGE STRESS METHODS;
MEDIUM ENERGY ION SCATTERING (MEIS);
NUCLEAR REACTION ANALYSIS (NRA);
PLASMA NITRIDATION;
SEMICONDUCTING FILMS;
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EID: 0033190176
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/S0167-9317(99)00340-8 Document Type: Article |
Times cited : (11)
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References (9)
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