SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 67-70

Ultrathin nitrided gate dielectrics by plasma-assisted processing

(5) Gusev, E P a,b Buchanan, D A a,b Jamison, P a,b Zabel, T H a,b Copel, M a,b

a IBM T J WATSON RESEARCH CENTER (United States)

b IBM (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRIC BREAKDOWN OF SOLIDS; ELLIPSOMETRY; FILM GROWTH; LEAKAGE CURRENTS; OXIDES; SILICA; ULTRATHIN FILMS;

CONSTANT VOLTAGE STRESS METHODS; MEDIUM ENERGY ION SCATTERING (MEIS); NUCLEAR REACTION ANALYSIS (NRA); PLASMA NITRIDATION;

SEMICONDUCTING FILMS;

EID: 0033190176 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(99)00340-8 Document Type: Article

Times cited : (11)

References (9)

1
- 4243795775
- J.H. Stathis and D.J. DiMaria, Proceedings IEDM 1998, p. 7.2.1
- (1998) Proceedings IEDM , pp. 721
- Stathis, J.H.¹ DiMaria, D.J.²

2
- 0031122158
- Y. Taur, D. Buchanan, W. Chen, D.J. Frank, K.I. Ismail, S.-H. Lo, G.A. Sai-Halasz, R.G. Viswanathan, H.-J.C. Wann, S.J. Wind, and H.-S. Wong, Proc. IEEE 85, 486 (1997)
- (1997) Proc. IEEE , vol.85 , pp. 486
- Taur, Y.¹ Buchanan, D.² Chen, W.³ Frank, D.J.⁴ Ismail, K.I.⁵ Lo, S.-H.⁶ Sai-Halasz, G.A.⁷ Viswanathan, R.G.⁸ Wann, H.-J.C.⁹ Wind, S.J.¹⁰ Wong, H.-S.¹¹

3
- 0032097083
- K. A. Ellis and R. A. Buhrman, J. Electrochem. Soc 145, 2068 (1997).
- (1997) J. Electrochem. Soc , vol.145 , pp. 2068
- Ellis, K.A.¹ Buhrman, R.A.²

4
- 0000057342
- edited by E. Garfunkel, E. P. Gusev, and A. Y. Vul' Kluwer Academic Publishers, Dordrecht/Boston/London
- M. L. Green, D. Brasen, L. Feldman, E. Garfunkel, E. P. Gusev, T. Gustafsson, W. N. Lennard, H. C. Lu, and T. Sorsch, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel, E. P. Gusev, and A. Y. Vul' (Kluwer Academic Publishers, Dordrecht/Boston/London, 1998), p. 181.
- (1998) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices , pp. 181
- Green, M.L.¹ Brasen, D.² Feldman, L.³ Garfunkel, E.⁴ Gusev, E.P.⁵ Gustafsson, T.⁶ Lennard, W.N.⁷ Lu, H.C.⁸ Sorsch, T.⁹

5
- 0000018164
- R. Kraft, T.P. Schneider, W.W. Dostalik, and S. Hattangady, J. Vac.Sci. Technol. B15, 967 (1997)
- (1997) J. Vac.Sci. Technol. , vol.B15 , pp. 967
- Kraft, R.¹ Schneider, T.P.² Dostalik, W.W.³ Hattangady, S.⁴

6
- 0033096666
- D. Kapila, S. Hattangady, M. Douglas, R. Kraft, M. Gribelyuk, J. Eelectrochem. Soc. 146, 1111 (1999).
- (1999) J. Eelectrochem. Soc. , vol.146 , pp. 1111
- Kapila, D.¹ Hattangady, S.² Douglas, M.³ Kraft, R.⁴ Gribelyuk, M.⁵

7
- 0008536186
- edited by E. Garfunkel, E. P. Gusev, and A. Y. Vul' Kluwer Academic Publishers, Dordrecht/ Boston/London
- G. Lucovsky, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel, E. P. Gusev, and A. Y. Vul' (Kluwer Academic Publishers, Dordrecht/ Boston/London, 1998), p. 147.
- (1998) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices , pp. 147
- Lucovsky, G.¹

8
- 0000565940
- I.J.R. Baumvol, C. Krug, F.C. Stedile, M.L. Green, D.C. Jacobson, D. Englisham, J.D. Bernstein, J. Shao, A.S. Denholm, P.L. Kellerman, Appl. Phys. Lett. 74, 806 (1999).
- (1999) Appl. Phys. Lett. , vol.74 , pp. 806
- Baumvol, I.J.R.¹ Krug, C.² Stedile, F.C.³ Green, M.L.⁴ Jacobson, D.C.⁵ Englisham, D.⁶ Bernstein, J.D.⁷ Shao, J.⁸ Denholm, A.S.⁹ Kellerman, P.L.¹⁰

9
- 84975361298
- D.M. Brown et. al J. Electrochem. Soc., 115, 311 (1968).
- (1968) J. Electrochem. Soc. , vol.115 , pp. 311
- Brown, D.M.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.