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Volumn 48, Issue 1, 1999, Pages 67-70

Ultrathin nitrided gate dielectrics by plasma-assisted processing

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRIC BREAKDOWN OF SOLIDS; ELLIPSOMETRY; FILM GROWTH; LEAKAGE CURRENTS; OXIDES; SILICA; ULTRATHIN FILMS;

EID: 0033190176     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00340-8     Document Type: Article
Times cited : (11)

References (9)
  • 7
    • 0008536186 scopus 로고    scopus 로고
    • edited by E. Garfunkel, E. P. Gusev, and A. Y. Vul' Kluwer Academic Publishers, Dordrecht/ Boston/London
    • G. Lucovsky, in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices, edited by E. Garfunkel, E. P. Gusev, and A. Y. Vul' (Kluwer Academic Publishers, Dordrecht/ Boston/London, 1998), p. 147.
    • (1998) Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices , pp. 147
    • Lucovsky, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.