Voltage-driven distribution of gate oxide breakdown

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 582-583

  Hiraiwa, A ^a   Sakai, S ^a   Ishikawa, D ^a  

^a HITACHI LTD   (Japan)

Author keywords

Breakdown voltage; Capacitors; Dielectric breakdown; Dielectric substrates; Electric breakdown; MOS devices; Pulse generation; Stochastic processes; Stress; Weibull distribution

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MOS CAPACITORS; PULSE GENERATORS; RANDOM PROCESSES; RECONFIGURABLE HARDWARE; RELIABILITY; STOCHASTIC SYSTEMS; STRESSES; WEIBULL DISTRIBUTION;

DIELECTRIC SUBSTRATES; GATE OXIDE BREAKDOWN; GATE VOLTAGES; LOG-NORMAL; MINIMUM DISTRIBUTIONS; PULSE GENERATION; STOCHASTIC VARIABLE;

MOS DEVICES;

EID: 67649648441     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197816     Document Type: Conference Paper

References (4)

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3. A. Hiraiwa, S. Sakai, D. Ishikawa, and M. Nakazawa, J. Appl. Phys. 91, 6571 (2002).
4. M. A. Alam, J. Bude and A. Ghetti, IRPS, p.21 (2000).