Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge De-trapping

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 90-91

  Chan, C T ^a   Ma, H C ^a   Tang, C J ^a   Wang, Tahui ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

NBTI; Recovery; Single charge de trapping; Thermally assisted tunneling

Indexed keywords

ELECTRIC POTENTIAL; HARDNESS; STRESS ANALYSIS; THERMOANALYSIS;

NBTI; SINGLE CHARGE DE-TRAPPING; THERMALLY-ASSISTED TUNNELING;

MOSFET DEVICES;

EID: 33646059101     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469224     Document Type: Conference Paper

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