Reliability investigation of InGaP/GaAs heterojunction bipolar transistors

IEEE Electron Device Letters

Volumn 17, Issue 9, 1996, Pages 446-448

  Bahl, Sandeep R ^a,b   Camnitz, Lovell H ^a,b   Houng, Denny ^b   Mierzwinski, Marek ^a,b  

^a IEEE

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; HYDROGEN; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; RELIABILITY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; VOLTAGE MEASUREMENT;

CURRENT GAIN; GAS SOURCE MOLECULAR BEAM EPITAXY; HYDROGEN CONCENTRATION; HYDROGEN OUT DIFFUSION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030242703     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.536288     Document Type: Article

References (10)

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