Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1455-1460

  Djoric Veljkovic, S ^a   Manic, I ^a   Davidovic, V ^a   Golubovic, S ^a   Stojadinovic, N ^a  

^a UNIVERSITY OF NI   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMMUNICATION SATELLITES; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; RADIATION EFFECTS; STRESS ANALYSIS; THRESHOLD VOLTAGE;

MOBILITY REDUCTION;

MOSFET DEVICES;

EID: 0041692616     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00258-0     Document Type: Conference Paper

References (12)

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