Aging and baking effects on the radiation hardness of MOS capacitors

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2158-2163

  Karmarkar, A P ^b   Choi, B K ^a,b   Schrimpf, R D ^a,b   Fleetwood, D M ^a,b  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

Aging effects; Burn in effects; MOS devices; Oxide trapped; Radiation effects

Indexed keywords

OXIDE CHARGE TRAPPING;

AGING OF MATERIALS; COMPUTER SIMULATION; ELECTRON TRAPS; GATES (TRANSISTOR); HARDNESS TESTING; POLYSILICON; RADIATION EFFECTS;

MOS CAPACITORS;

EID: 0035723330     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983189     Document Type: Conference Paper

References (20)

1. Overview of radiation effects in the space telecommunications environment
2. Impact of aging on radiation hardness
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4. Effects of burn-in on radiation hardness
5. Effects of reliability screens on MOS charge trapping
6. The response of MOS devices to dose-enhanced low-energy radiation
7. Comparison of enhanced device response and predicted X-ray dose-enhancement effects on MOS oxides
8. Microstroctural variations in radiation hard and radiation soft oxides observed through electron spin resonance
9. Microscopic nature of border traps in MOS oxides
10. Correlating the radiation response of MOS capacitors and transistors
11. Hardness variability in commercial technologies
12. Total-dose issues for microelectronics in space systems
13. Use of COTS microelectronics in radiation environments
14. 2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors
15. Mechanisms for total dose sensitivity to preirradiation thermal stress in bipolar linear microcircuits
16. Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs
17. 2 interface
18. Effect of post oxidation anneal temperature on radiation induced charge trapping in metal-oxide semiconductor devices
19. Mechanical stress dependence of radiation effects in MOS structure