Temperature-humidity-bias-behavior and acceleration model for InP planar PIN photodiodes

Journal of Lightwave Technology

Volumn 14, Issue 8, 1996, Pages 1865-1881

  Osenbach, J W ^a   Evanosky, T L ^a  

^a AT and T Microelectronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; EPITAXIAL GROWTH; FAILURE ANALYSIS; HYDROGEN; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING POLYMERS; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACES;

DARK CURRENT; LOGNORMAL DISTRIBUTION; SEMICONDUCTOR EROSION;

PHOTODIODES;

EID: 0030216659     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.532025     Document Type: Article

References (17)

1. D. W. Faulkner, "Optical networks for local loop applications," J. Lightwave Technol, vol. 7, Nov. 1989.
2. Bellcore Technical Advisory TA-NWT-001221, Issue 1, Mar. 1992.
3. F. R. Nash and R. L. Hartman, "Accelerated focal erosion formation and degradation of (Al, Ga) as double-heterostructure lasers," IEEE J. Quantum. Electron., vol. QE-16, p. 1022, 1980.
4. L. S. Lichtmann, P. A. Koh, and R. H. Burton, "Degradation of silicon nitride-protected planar InGaAs PIN photodiodes by electrochemical etching reaction," in 8th IEEE Semiconductor Laser Conf., 1982.
5. R. R. Sutherland J. C. D. Stokol, C. P. Skrimshire, B. M. MacDonald, and N. F. Sloan, "The reliability of planar InGaAs/InP PIN photodiodes with organic coatings for use in low cost receivers," in SPIE, Fiber Optic Reliability, vol. 1774, no. 226, 1989.
6. M. M. Morimoto and N. Takusagawa, "Accelerated facet degradation of InGaAsP/InP double-heterostructure lasers in water," J. Appl. Phys., vol. 53, p. 4028, 1982.
7. R. B. Cornizzoli, "Review of Aluminum IC Corrosion Data," J. Electtrochem Soc. 123, 386 (1976).
8. J. W. Blade, "The effectiveness of silicon gel for corrosion prevention of silicon circuits: The final report of the IEEE Computer Society Computer Packaging Committee Special Task Force," IEEE Trans. Comput., Hybrids. Manufact. Technol., vol. 14, p. 352, 1991.
9. O. Hallberg, and P. S. Peck, "Recent humidity accelerations, A base for testing standards," Qual. Reliab. Eng. Int., vol. 7, p. 169, 1991.
10. J. W. Osenbach and W. R. Knolle, "Behavior of a-SiN:H and a SiON:H films in condensed water," J. Electrochem. Soc., vol. 139, p. 3346, 1992.
11. J. W. Osenbach, "Water induced corrossion of materials used for semiconductor passivation," presented at Toronto Meeting ECS, Fall 1992, J. Electrochem. Soc., to be published.
12. M. Pourboix, Ed, Atlas of Electrochemical Equilibrea in Aqueous Solutions. New York: Borgaman, 1966.
13. R. W. Laurosen, "A review of the status of plastic encapsulated semiconductor component reliability," Brit. Telecommun. Technol. J., p. 295, 1984.
14. R. R. Sutherland, "The reliability of encapsulated and unencapsulated thick-film hybrid microcircuits," Microelectronics. J., vol. 17, p. 35, 1981.
15. J. W. Osenbach and T. L. Evanosky, unpublished research.
16. S. R. Forrest, R. F. Lebeney, R. E. Nahory, and M. A. Pollack, Appl. Phys. Lett. 37, 322 (1980).
17. S. M. Sze, Ed., Physics of Semiconductor Devices. New York: Wiley, 1981, p. 89.