Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3131-3133

  Khanna, Rohit ^a   Allums, K K ^a   Abernathy, C R ^a   Pearton, S J ^a   Kim, Jihyun ^a   Ren, F ^a   Dwivedi, R ^b   Fogarty, T N ^b   Wilkins, R ^b  

^a University of Florida   (United States)

^b PRAIRIE VIEW A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELCTROLUMINESCENCE (EL) SPECTRA; MULTI-QUANTUM WELLS (MQW); SHEET RESISTANCE; TRAP STATES;

CARRIER MOBILITY; ELECTROLUMINESCENCE; HIGH ELECTRON MOBILITY TRANSISTORS; IONIZING RADIATION; LIGHT EMITTING DIODES; PROTON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 8644251970     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803933     Document Type: Article

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