Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped AlxGa1-xN and thick GaN Cap layers

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3801-3806

  Karmarkar, Aditya P ^a   Jun, Bongim ^a   Fleetwood, Daniel M ^a   Schrimpf, Ronald D ^a   Weller, Robert A ^a   White, Brad D ^b   Brillson, Leonard J ^b   Mishra, Umesh K ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b Ohio State University   (United States)

^c University of California   (United States)

Author keywords

Gallium alloys; Modulation doped field effect transistors (MODFETs); Proton radiation effects

Indexed keywords

ALUMINUM ALLOYS; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; INTERFACIAL ENERGY; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE MODULATION; SEMICONDUCTING GALLIUM COMPOUNDS; THRESHOLD VOLTAGE;

ACTIVE DEVICE STRUCTURES; BAND GAPS; MODULATION-DOPED FIELD EFFECT TRANSISTORS (MODFET); PROTON RADIATION EFFECTS;

PROTON IRRADIATION;

EID: 11044226021     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839199     Document Type: Conference Paper

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