Proton implantation effects on electrical and optical properties of undoped AlGaN with high Al mole fraction

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2500-2505

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Pashkova, N V ^a   Pearton, S J ^b   Zavada, J M ^c   Wilson, R G ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b University of Florida   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; HALL EFFECT; ION IMPLANTATION; LUMINESCENCE; OPTICAL PROPERTIES; PROTONS; RELAXATION PROCESSES; SPECTROSCOPIC ANALYSIS;

LUMINESCENCE BANDS; MOLE FRACTION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0942278342     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1617283     Document Type: Article

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