The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

IEEE Transactions on Nuclear Science

Volumn 51, Issue 2, 2004, Pages 293-297

  Hu, Xinwen ^a   Choi, Bo K ^a   Barnaby, Hugh J ^b   Fleetwood, Daniel M ^a   Schrimpf, Ronald D ^a   Lee, Sungchul ^a   Shojah Ardalan, S ^c   Wilkins, R ^c   Mishra, Umesh K ^d   Dettmer, Ross W ^e  

^a VANDERBILT UNIVERSITY   (United States)

^b University of Arizona   (United States)

^c PRAIRIE VIEW A AND M UNIVERSITY   (United States)

^d Santa Barbara   (United States)

^e AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Displacement damage; GaN; High electron mobility transistors; Nonioizing energy loss (NIEL); Proton radiation effects

Indexed keywords

ANNEALING; DEGRADATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GALLIUM NITRIDE; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PROTON IRRADIATION;

DISPLACEMENT DAMAGE; GAN; NONIONIZING ENERGY LOSS (NIEL); PROTON RADIATION EFFECTS;

ALUMINUM NITRIDE;

EID: 2442478436     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.825077     Document Type: Article

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