Proton-Irradiation Effects on AlGaN/AlN/GaN High Electron Mobility Transistors

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1791-1796

  Hu, Xinwen ^a,b   Karmarkar, Aditya P ^a   Jun, Bongim ^a   Fleetwood, Daniel M ^a   Schrimpf, Ronald D ^a   Geil, Robert D ^a   Weller, Robert A ^a   White, Brad D ^c   Bataiev, Mykola ^d   Brillson, Leonard J ^c   Mishra, Umesh K ^e  

^a VANDERBILT UNIVERSITY   (United States)

^b Division of Spang and Co   (United States)

^c The Ohio State University   (United States)

^d OHIO STATE UNIVERSITY   (United States)

^e University of California   (United States)

Author keywords

Gallium alloys; MODFETs; Proton radiation effects

Indexed keywords

CARRIER MOBILITY; DEGRADATION; ELECTRON GAS; FREQUENCIES; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RADIATION DAMAGE; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

MODFET; PROTON RADIATION EFFECTS; RADIATION TOLERANCE;

PROTON IRRADIATION;

EID: 10744227233     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.820792     Document Type: Conference Paper

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