Effects of proton irradiation on AlGaN/ InGaN/GaN green light emitting diodes

Electronics Letters

Volumn 33, Issue 14, 1997, Pages 1252-1254

  Osinski M ^a   Perlin, P ^a   Schone H ^b   Paxton, A H ^b   Taylor, E W ^b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Light emitting diodes; Optoelectronic devices; Semiconductor devices

Indexed keywords

LIGHT EMISSION; LOW TEMPERATURE EFFECTS; PROTONS; RADIATION EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

NONRADIATIVE RECOMBINATION CHANNELS; PHOTO IRRADIATION;

LIGHT EMITTING DIODES;

EID: 0031551213     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970816     Document Type: Article

References (6)

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6. PERLIN, P., OSIŃSKI, M., ELISEEV, P.G.: 'Optical and electrical characteristics of single-quantum-well InGaN light emitting diodes', in MOUSTAKAS, T., AKASAKI, I., MONEMAR, B., and PONCE, F. (Eds.): 'III-V Nitrides'. Materials Research Society Symp. Proc., Boston, Massachusetts, 2-6 December 1996, Vol. 449 (in print)