Proton implantation effects on electrical and luminescent properties of p-GaN

Journal of Applied Physics

Volumn 94, Issue 5, 2003, Pages 3069-3074

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Pearton, S J ^b   Zavada, J M ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b UNIVERSITY OF FLORIDA   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CATHODOLUMINESCENCE; COMPLEXATION; HOLE MOBILITY; METALLIC FILMS; PROTONS; SCHOTTKY BARRIER DIODES;

MICROCATHODOLUMINESCENCE (MCL);

GALLIUM NITRIDE;

EID: 0141633900     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1600828     Document Type: Article

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