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Volumn 5, Issue 7, 2002, Pages

High-energy proton irradiation of MgO/GaN metal oxide semiconductor diodes

(13) Kim, Jihyun a Gila, B P a Mehandru, R a Luo, B a Onstine, A H a Abernathy, C R a Ren, F a Allums, K K a Dwivedi, R b Forgarty, T N b Wilkins, R b Irokawa, Y c Pearton, S J a

a University of Florida (United States)

b PRAIRIE VIEW A AND M UNIVERSITY (United States)

c Rd Management Section (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRAPS; GALLIUM NITRIDE; MAGNESIA; MISFET DEVICES; MOSFET DEVICES; PROTON IRRADIATION; PROTONS;

FLUENCE; INTERFACE STATE DENSITY;

MOS DEVICES;

EID: 0036644174 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1481796 Document Type: Article

Times cited : (12)

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