Transport properties of proton-irradiated gallium nitride-based two-dimensional electron-gas system

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2702-2707

  Gaudreau, François ^a   Fournier, Patrick ^a   Carlone, Cosmo ^a   Khanna, Shyam M ^b   Tang, Haipeng ^c   Webb, Jim ^c   Houdayer, Alain ^d  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b DEFENCE RESEARCH AND DEVELOPMENT CANADA   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

2 MeV proton irradiation; AlGaN GaN; Carrier density measurements; Mobility measurements; Two dimensional electron gas

Indexed keywords

ALUMINUM ALLOYS; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC INSULATORS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HALL EFFECT; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; PIEZOELECTRICITY; PROTON IRRADIATION; PYROELECTRICITY; QUANTUM THEORY; RADIATION DAMAGE; TRANSPORT PROPERTIES;

CARRIER DENSITY PROPERTIES;

ELECTRON GAS;

EID: 0036945003     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805358     Document Type: Conference Paper

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