Annealing and measurement temperature dependence of W 2B- and W 2B 5-based rectifying contacts to p-GaN

Journal of Electronic Materials

Volumn 36, Issue 4, 2007, Pages 384-390

  Voss, L F ^a   Stafford, L ^a   Thaler, G T ^a   Abernathy, C R ^a   Pearton, S J ^a   Chen, J J ^a   Ren, F ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Borides; GaN; Schottky contacts; Tunneling

Indexed keywords

DEEP-LEVEL DEFECTS; INTERFACIAL LAYER; SCHOTTKY BARRIER HEIGHT (SBH); THERMIONIC FIELD EMISSION;

AUGER ELECTRON SPECTROSCOPY; GALLIUM NITRIDE; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; TUNGSTEN COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

OHMIC CONTACTS;

EID: 34249067499     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0054-8     Document Type: Conference Paper

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