ICTS measurements for p-GaN Schottky contacts

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 318-321

  Shiojima, Kenji ^a   Sugitani, Suehiro ^a   Sakai, Shiro ^b  

^a NTT CORPORATION   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

ICTS; p GaN; Schottky contacts

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENTS; ENERGY GAP; GALLIUM NITRIDE; INTERFACES (MATERIALS);

ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY (ICTS);

SCHOTTKY BARRIER DIODES;

EID: 0037042004     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00900-X     Document Type: Article

References (11)