Schottky barrier properties of various metal (Zr, Ti, Cr, Pt) contact on p-GaN revealed from I-V-T measurement

Applied Surface Science

Volumn 252, Issue 16, 2006, Pages 5930-5935

  Tan, C K ^a   Abdul Aziz, A ^a   Yam, F K ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

I V T; p GaN; Pinning Fermi level; Schottky contact

Indexed keywords

ACTIVATION ENERGY; CHROMIUM; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; FERMI LEVEL; NICKEL; OHMIC CONTACTS; PLATINUM; TITANIUM; ZIRCONIUM;

CURRENT-VOLTAGE-TEMPERATURE (I-V-T); P-GAN; PINNING FERMI LEVEL; SCHOTTKY CONTACT;

SCHOTTKY BARRIER DIODES;

EID: 33744515125     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.08.018     Document Type: Article

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