Materials characterization of WSi contacts to n+-GaN as a function of rapid thermal annealing temperatures

Journal of the Electrochemical Society

Volumn 144, Issue 10, 1997, Pages

  Cole, M W ^a   Ren, F ^b   Pearton, S J ^c  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); METALLIZING; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; THERMAL EFFECTS; TUNGSTEN COMPOUNDS;

GALLIUM NITRIDE; TUNGSTEN SILICIDE;

OHMIC CONTACTS;

EID: 0031246719     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838007     Document Type: Article

References (7)

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