Annealing and measurement temperature dependence of W 2 B 5 -based rectifying contacts to n-GaN

Applied Surface Science

Volumn 252, Issue 16, 2006, Pages 5814-5819

  Khanna, Rohit ^a   Pearton, S J ^a   Ren, F ^b   Kravchenko, I ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c University of Florida   (United States)

Author keywords

n GaN; Temperature dependence; Thermal stability

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; DIODES; GOLD; METALLIZING; SCANNING ELECTRON MICROSCOPY; TEMPERATURE MEASUREMENT; THERMIONIC EMISSION; THERMODYNAMIC STABILITY; TITANIUM;

ANNEAL TEMPERATURE; N-GAN; SCHOTTKY CONTACT; TEMPERATURE DEPENDENCE;

TUNGSTEN COMPOUNDS;

EID: 33744545520     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.07.036     Document Type: Article

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