Thermally induced variation in barrier height and ideality factor of Ni/Au contacts to p-GaN

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 291-296

  Hibbard, D L ^a   Chuang, R W ^a   Zhao, Y S ^a   Jensen, C L ^a   Lee, H P ^a   Dong, Z J ^b   Shih, R ^b   Bremser, M ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Alpha Photonics Inc   (United States)

^c AIXTRON Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; GOLD; INTERFACES (MATERIALS); NICKEL; NITROGEN; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS;

SCHOTTKY BARRIER HEIGHT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033890883     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0065-9     Document Type: Article

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16. 5 Ω. We have further assumed that the reverse bias I-V of the metal-semiconductor contact can be modeled as a Schottky diode with barrier height of 0.5 eV (symmetry I-V property). The values of LT are estimated from HSPICE itself.