Schottky barrier height of boride-based rectifying contacts to p-GaN

Applied Physics Letters

Volumn 89, Issue 13, 2006, Pages

  Stafford, L ^a   Voss, L F ^a   Pearton, S J ^a   Chen, J J ^a   Ren, F ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORT; CURRENT FLOW; INTERFACIAL LAYERS; SCHOTTKY BARRIER HEIGHT (SBH);

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; GALLIUM NITRIDE; SURFACE CHEMISTRY; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

SCHOTTKY BARRIER DIODES;

EID: 33749252157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357855     Document Type: Article

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