Free and bound excitons in thin wurtzite GaN layers on sapphire

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 712-716

  Merz, C ^a   Kunzer, M ^a   Kaufmann, U ^a   Akasaki, I ^b   Amano, H ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DOPING; SUBSTRATES;

COMPRESSIVE HYDROSTATIC STRESS COMPONENT; ULTRAVIOLET SHIFT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030148433     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/010     Document Type: Article

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