Study of Schottky barrier heights of indium-tin-oxide on p-GaN using X-ray photoelectron spectroscopy and current-voltage measurements

Journal of Electronic Materials

Volumn 33, Issue 9, 2004, Pages 1036-1040

  Lin, Yow Jon ^a   Hsu, Chou Wei ^b  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Gallium nitride (GaN); Indium tin oxide (ITO); Schottky barrier height; Thermionic field emission (TFE); X ray photoelectron spectroscopy (XPS)

Indexed keywords

BINDING ENERGY; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; X RAY PHOTOELECTRON SPECTROSCOPY;

BUFFER LAYERS; CURRENT TRANSPORT; SCHOTTKY BARRIER HEIGHTS; THERMIONIC FIELD EMISSION (TFE);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 4944232306     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0032-y     Document Type: Article

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