Insulator engineering in GaN-based MIS HFETs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6473, Issue , 2007, Pages

  Maeda, Narihiko ^a   Hiroki, Masanobu ^a   Watanabe, Noriyuki ^a   Oda, Yasuhiro ^a   Yokoyama, Haruki ^a   Yagi, Takuma ^b   Makimoto, Toshiki ^c   Enoki, Takatomo ^a   Kobayashi, Takashi ^a  

^a NTT CORPORATION   (Japan)

^b NTT Advance Technology Corporation   (Japan)

^c NTT Basic Research Laboratories   (Japan)

Author keywords

Al2O 3 Si3N4; AlGaN GaN HFET; GaN based HFET; Insulated gate; Insulator engineering; MIS HFET; Surface passivation

Indexed keywords

CUTOFF FREQUENCY; ELECTRIC PROPERTIES; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; THRESHOLD VOLTAGE; TWO DIMENSIONAL;

DEPOSITION EFFECTS; INSULATED-GATE; INSULATOR ENGINEERING; SURFACE PASSIVATION;

FIELD EFFECT TRANSISTORS;

EID: 34248684132     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.703659     Document Type: Conference Paper

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