RF and DC characteristics in Al 2O 3/Si 3N 4 insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1861-1865

  Maeda, Narihiko ^a   Makimura, Takashi ^a   Maruyama, Takashi ^b   Wang, Chengxin ^a   Hiroki, Masanobu ^a   Yokoyama, Haruki ^a   Makimoto, Toshiki ^c   Kobayashi, Takashi ^a   Enoki, Takatomo ^a  

^a NTT CORPORATION   (Japan)

^b NTT Advanced Technology Corporation   (Japan)

^c Bio Medical Informatics Research Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE LEAKAGE CURRENT; GATE LENGTH; METALN INSULATOR SEMICONDUCTOR (MIS); OSCILLATION FREQUENCY;

ALUMINA; ALUMINUM NITRIDE; CURRENT DENSITY; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; OSCILLATIONS; SILICON NITRIDE; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 33745036534     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565165     Document Type: Article

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